IRFL014NTRPBF vs IRFR5305TRLPBF 对比

详细并排对比 IRFL014NTRPBF 出自 Infineon 和 IRFR5305TRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRFL014NTRPBF IRFR5305TRLPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.30 $0.38
FET Type N-Channel MOSFET, Metal Oxide —
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at 25 C 1.9 A —
Continuous Drain Current (ID) at 70 C [DATA_NEEDED: ID at 70 C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max ±20 V —
RDS(on) max at VGS=10V 160 milliohm —
Gate Charge (Qg) typical 7 nC —
Threshold Voltage VGS(th) typical [DATA_NEEDED: VGS(th)] —
Power Dissipation (PD) at 25 C 1.0 W (free air), up to 2.1 W with proper PCB copper —
工作温度范围 -55 C to +150 C (junction) —
封装 SOT-223 (TO-261-4), 4-pin (3 + tab) TO-252AA (DPAK), surface mount
安装类型 Surface Mount Surface Mount
Avalanche Rated Yes (fully avalanche rated) Yes (fully avalanche rated)
dv/dt Rating Yes (dynamic dv/dt rated) —
Lead-Free / RoHS Yes / Compliant Yes (Pb-free, suffix "PBF")
MSL 等级 Level 1 (per JEDEC J-STD-020) —
Technology HEXFET (planar N-channel, fifth generation) HEXFET fifth-generation planar MOSFET
Polarity / Channel Type — P-Channel
Drain-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID) at Tc=25C — -31 A
Gate-Source Voltage (VGS) max — ±20 V
RDS(on) max at VGS=-10V — 65 mΩ
RDS(on) max at VGS=-5V — [DATA_NEEDED: RDS(on) at VGS=-5V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) range]
Power Dissipation (PD) at Tc=25C — 110 W
工作结温 — -55C to +175C
Tape & Reel Orientation — Left orientation (TRLPBF = Tape & Reel, Left)

数据手册与资源

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