IRFR120NTRLPBF vs IRFL014NTRPBF 对比
详细并排对比 IRFR120NTRLPBF 出自 Infineon 和 IRFL014NTRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRFR120NTRLPBF | IRFL014NTRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.62 | $0.30 |
| FET Type | N-Channel | N-Channel MOSFET, Metal Oxide |
| Technology | IR MOSFET (HEXFET) | HEXFET (planar N-channel, fifth generation) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25C | 9.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| On-Resistance RDS(on) max at VGS=10V | 210 mΩ | — |
| Total Gate Charge (Qg) | 16.7 nC | — |
| Power Dissipation (PD) at TC=25C | 48 W | — |
| 工作结温范围 | -55C to +175C | — |
| Avalanche Energy Rated | Yes (fully avalanche rated) | — |
| 封装 | PG-TO252-3 (DPAK) | SOT-223 (TO-261-4), 4-pin (3 + tab) |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Compliant | — |
| Lead-Free Finish | Yes (Pb-free) | — |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at 25 C | — | 1.9 A |
| Continuous Drain Current (ID) at 70 C | — | [DATA_NEEDED: ID at 70 C] |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| RDS(on) max at VGS=10V | — | 160 milliohm |
| Gate Charge (Qg) typical | — | 7 nC |
| Threshold Voltage VGS(th) typical | — | [DATA_NEEDED: VGS(th)] |
| Power Dissipation (PD) at 25 C | — | 1.0 W (free air), up to 2.1 W with proper PCB copper |
| 工作温度范围 | — | -55 C to +150 C (junction) |
| Avalanche Rated | — | Yes (fully avalanche rated) |
| dv/dt Rating | — | Yes (dynamic dv/dt rated) |
| Lead-Free / RoHS | — | Yes / Compliant |
| MSL 等级 | — | Level 1 (per JEDEC J-STD-020) |