IRFR120NTRLPBF vs IRFR1205TRPBF 对比

详细并排对比 IRFR120NTRLPBF 出自 Infineon 和 IRFR1205TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRFR120NTRLPBF IRFR1205TRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.62 $0.49
FET Type N-Channel N-Channel
Technology IR MOSFET (HEXFET) HEXFET (IR MOSFET, 5th generation)
Drain-Source Voltage (VDS) 100 V 55 V
Continuous Drain Current (ID) at TC=25C 9.4 A 44 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 160 A
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] +/- 20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] 2 V min, 4 V max
On-Resistance RDS(on) max at VGS=10V 210 mΩ —
Total Gate Charge (Qg) 16.7 nC 43.3 nC
Power Dissipation (PD) at TC=25C 48 W —
工作结温范围 -55C to +175C —
Avalanche Energy Rated Yes (fully avalanche rated) —
封装 PG-TO252-3 (DPAK) TO-252AA (DPAK)
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant Compliant (PBF suffix = lead-free)
Lead-Free Finish Yes (Pb-free) —
On-Resistance RDS(on) at VGS=10V — 27 mOhm max
Power Dissition (PD) at TC=25C — 107 W
工作结温 — -55C to +175C
Lead-Free / Halogen-Free — Yes / [DATA_NEEDED: halogen status]

数据手册与资源

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