IRFR120NTRPBF vs IRLB4030PBF 对比

详细并排对比 IRFR120NTRPBF 出自 Infineon 和 IRLB4030PBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFR120NTRPBF IRFR120NTRPBF - 100V N-Channel HEXFET MOSFET | Infineon

IRFR120NTRPBF - 100V N-Channel HEXFET MOSFET | Infineon

IRFR120NTRPBF ✓ 量产中

规格对比

参数 IRFR120NTRPBF IRLB4030PBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.26 $3.10
Drain-to-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at TC=25C 9.4 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current value]
Maximum Power Dissipation (PD) at TC=25C 48 W —
Static Drain-to-Source On-Resistance (RDS(on)) max 210 milliohms at VGS=10V —
Gate-to-Source Threshold Voltage (VGS(th)) 2 V to 4 V typical —
Total Gate Charge (Qg) typical 16.7 nC —
Gate-to-Source Charge (Qgs) [DATA_NEEDED: Qgs] —
Gate-to-Drain Charge (Qgd) [DATA_NEEDED: Qgd] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: Coss] —
Reverse Transfer Capacitance (Crss) [DATA_NEEDED: Crss] —
工作结温范围 -55C to +175C —
封装 TO-252AA (DPAK) TO-220AB
安装类型 Surface Mount Through Hole
Channel Type N-Channel Enhancement Mode —
Technology HEXFET (IR MOSFET fifth generation) HEXFET (StrongIRFET family)
Avalanche Energy Rating (EAS) [DATA_NEEDED: EAS] —
Thermal Resistance Junction-to-Case (RthJC) max [DATA_NEEDED: RthJC] —
Lead-Free / RoHS Status Lead-Free, RoHS Compliant —
晶体管类型 — N-Channel MOSFET
Continuous Drain Current (ID) at Tc — 180 A
On-Resistance RDS(on) max at VGS=10V — 4.3 mOhm
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Qg) — 87 nC
Gate-to-Source Voltage (VGS) max — [DATA_NEEDED: VGS absolute maximum, typical +/- 20 V]
Power Dissipation (PD) at Tc — 370 W
工作温度范围 — -55C to +175C
Logic Level Drive — Yes (optimized for 4.5 V to 10 V VGS)
Qualification — JEDEC
RoHS 状态 — Compliant

数据手册与资源

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