IRFR2405TRLPBF vs IRFZ48NSTRLPBF 对比

详细并排对比 IRFR2405TRLPBF 出自 Infineon 和 IRFZ48NSTRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFR2405TRLPBF IRFR2405TRLPBF - 55V 56A N-Ch HEXFET MOSFET DPAK | Infineon

IRFR2405TRLPBF - 55V 56A N-Ch HEXFET MOSFET DPAK | Infineon

IRFR2405TRLPBF ✓ 量产中
Infineon
IRFZ48NSTRLPBF IRFZ48NSTRLPBF - 55V 64A N-Ch MOSFET, 14mΩ D2PAK | Infineon

IRFZ48NSTRLPBF - 55V 64A N-Ch MOSFET, 14mΩ D2PAK | Infineon

IRFZ48NSTRLPBF ✓ 量产中

规格对比

参数 IRFR2405TRLPBF IRFZ48NSTRLPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.55 $1.18
晶体管类型 N-Channel MOSFET —
Technology HEXFET (IR MOSFET, 7th generation) —
Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at Tc 56 A —
Pulsed Drain Current (IDM) 200 A (typical, per datasheet family) [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V 16 mOhm —
Gate Charge (Qg) typical 70 nC —
Power Dissipation (PD) at Tc 110 W —
Gate-Source Voltage (VGS) max ±20 V —
工作温度范围 -55 C to +175 C (junction) —
封装 TO-252AA (DPAK), 3-pin (2 + Tab) D2PAK (TO-263) Surface Mount
安装类型 Surface Mount Surface Mount
Avalanche Energy Rated Yes (HEXFET ruggedized design) —
Lead-Free / RoHS Yes, PBF suffix indicates lead-free and RoHS compliant —
Packaging Tape & Reel (TR) Tape & Reel (13-inch reel, TRL)
FET Type — N-Channel Power MOSFET
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) @ Tc=25C — 64 A
Static Drain-to-Source On-Resistance (Rds(on)) — 14 mΩ at VGS = 10 V
Gate-to-Source Threshold Voltage (VGS(th)) — 2.0 V to 4.0 V
Total Gate Charge (Qg) — 54 nC
Gate-to-Source Voltage (VGS) max — ±20 V
Power Dissipation (Pd) @ Tc=25C — 130 W
Power Dissipation (Pd) @ Ta=25C on FR-4 — 3.8 W
工作结温 — -55C to +175C
Lead Finish — Lead-free (PBF) matte tin
RoHS 状态 — Compliant
Technology Family — HEXFET advanced process technology

数据手册与资源

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