IRFR3710ZTRPBF vs IRFR3710ZTRLPBF 对比
详细并排对比 IRFR3710ZTRPBF 出自 Infineon 和 IRFR3710ZTRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRFR3710ZTRPBF | IRFR3710ZTRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.42 | $0.58 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25C | 56 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM] | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | 18 mOhm | — |
| Power Dissipation (PD) at TC=25C | 140 W | — |
| 工作结温 | -55C to +175C | — |
| Technology | HEXFET (IR MOSFET) | MOSFET (Metal Oxide), HEXFET |
| 封装 | TO-252AA (DPAK) | TO-252AA (DPAK), 3-pin (2+tab) |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Compliant | Compliant (Pb-free PBF suffix) |
| Lead-Free | Yes | — |
| Drain to Source Voltage (Vdss) | — | 100 V |
| Continuous Drain Current (Id) @ 25C (Tc) | — | 42 A |
| Max Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max @ VGS=10V | — | 18 mOhm |
| Gate-Source Voltage (Vgs) max | — | [DATA_NEEDED: Vgs max rating] |
| Gate Threshold Voltage (Vgs(th) typ) | — | [DATA_NEEDED: Vgs(th)] |
| Total Gate Charge (Qg) | — | 69 nC |
| Power Dissipation (Pd) @ Tc=25C | — | 140 W |
| Avalanche Energy Rating (EAS) | — | 150 mJ |
| Maximum Junction Temperature | — | 175 C |
| Automotive Qualification | — | AEC-Q101 (per Lisleapex listing) |
| Configuration | — | Single with built-in diode |
| 工作温度 | — | -55 C to +175 C (TJ) |