IRFR4615TRLPBF vs IRF2907ZSTRLPBF 对比

详细并排对比 IRFR4615TRLPBF 出自 Infineon 和 IRF2907ZSTRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFR4615TRLPBF IRFR4615TRLPBF - 150V 33A N-Ch MOSFET, DPAK | Infineon

IRFR4615TRLPBF - 150V 33A N-Ch MOSFET, DPAK | Infineon

IRFR4615TRLPBF ✓ 量产中

规格对比

参数 IRFR4615TRLPBF IRF2907ZSTRLPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.39 $1.55
Technology IR MOSFET (N-Channel Enhancement Mode) IR HEXFET / IR MOSFET
Drain-Source Voltage (VDS) 150 V —
Continuous Drain Current (ID) at TC=25C 33 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] —
On-Resistance RDS(on) max at VGS=10V 42 mOhm —
Total Gate Charge (Qg) 26 nC —
Gate-Source Charge (Qgs) [DATA_NEEDED: Qgs] —
Gate-Drain Charge (Qgd) [DATA_NEEDED: Qgd] —
Power Dissipation (PD) at TC=25C 144 W —
Avalanche Energy (EAS) 109 mJ —
工作温度范围 -55C to +175C —
封装 TO-252AA (DPAK) D2PAK (TO-263AB) surface mount
安装类型 Surface Mount Surface Mount (SMD)
Lead-Free / RoHS Yes (PBF suffix indicates Pb-free) —
单脉冲雪崩能量 109 mJ —
Transistor Polarity — N-Channel
Drain-Source Voltage V(BR)DSS — 75 V
连续漏极电流(TC=25°C) — 170 A
连续漏极电流(TC=100°C) — [DATA_NEEDED: ID at TC=100C]
RDS(on) max at VGS = 10 V — 4.5 mOhm
RDS(on) typical at VGS = 10 V — 3.5 mOhm
Gate Threshold Voltage VGS(th) — 2.0 V to 4.0 V
Maximum Power Dissipation (TC = 25 C) — 300 W
工作结温 — -55 C to +175 C
引脚数量 — 3 (Gate, Drain, Source)
Packaging — Tape and Reel (left orientation)
Lead-Free — Yes (PBF suffix)
RoHS 状态 — Compliant
Avalanche Rating — Repetitive avalanche allowed up to TJ(max)

数据手册与资源

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