IRFR5305TRPBF vs IRF5305PBF 对比

详细并排对比 IRFR5305TRPBF 出自 Infineon 和 IRF5305PBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFR5305TRPBF IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF ✓ 量产中

规格对比

参数 IRFR5305TRPBF IRF5305PBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.32 $0.51
Polarity P-Channel —
Drain-Source Voltage (VDS) Max -55 V —
Continuous Drain Current (ID) at TC=25C 31 A -31 A
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] [DATA_NEEDED: ID at TC=100C]
On-Resistance (RDS(on)) Max at VGS=-10V 65 mOhm —
Gate-Source Threshold Voltage (VGS(th)) -2 V to -4 V —
Gate Charge (Qg) Typ [DATA_NEEDED: Qg typ] —
Power Dissipation (PD) at TC=25C 110 W —
Single-Pulse Avalanche Energy (EAS) 270 mJ —
工作温度范围 -55 C to +175 C —
封装 TO-252AA (DPAK) TO-220AB (through-hole, 3-pin + tab)
安装类型 Surface Mount Through Hole
Technology HEXFET (IR MOSFET) HEXFET (planar DMOS)
MSL 等级 1 —
RoHS 状态 Compliant (Pb-free PBF suffix) Compliant
Lead-Free Finish Yes (PBF suffix) —
FET Type — P-Channel
Drain-to-Source Voltage (VDS) — -55 V
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Maximum Power Dissition (PD) at TC=25C — 110 W
Gate-to-Source Voltage (VGS) max — ±20 V
Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V — 60 mOhm (typical)
Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V ID=-16A — [DATA_NEEDED: max RDS(on) at -10V]
Total Gate Charge (Qg) — 42 nC (typical)
Gate-to-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Turn-On Delay Time (td(on)) — [DATA_NEEDED: td(on)]
Turn-Off Delay Time (td(off)) — [DATA_NEEDED: td(off)]
Thermal Resistance, Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC]
Thermal Resistance, Junction-to-Ambient (RthJA) — [DATA_NEEDED: RthJA]
工作结温 — -55C to +175C
Lead-Free Plating (PBF suffix) — Yes (Pb-free)

数据手册与资源

浏览全部产品 创建 BOM 获取报价