IRFR9120NTRPBF vs IRFR2405TRPBF 对比

详细并排对比 IRFR9120NTRPBF 出自 Infineon 和 IRFR2405TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFR2405TRPBF IRFR2405TRPBF - 55V 56A N-Channel HEXFET MOSFET | Infineon

IRFR2405TRPBF - 55V 56A N-Channel HEXFET MOSFET | Infineon

IRFR2405TRPBF ✓ 量产中

规格对比

参数 IRFR9120NTRPBF IRFR2405TRPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.32 $0.61
Polarity P-Channel —
Drain-Source Voltage (VDS) -100 V 55 V
Continuous Drain Current (ID) at TC=25C -6.6 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on)) max at VGS=-10V 480 milliohm —
Gate-Source Voltage (VGS) max +/-20 V [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) 18 nC (typical) 70 nC
Continuous Power Dissipation (PD) at TC=25C 40 W —
工作结温范围 -55C to +175C —
Thermal Resistance Junction-to-Case (RthJC) [DATA_NEEDED: RthJC] —
封装 TO-252AA (DPAK), surface mount TO-252AA (DPAK)
安装类型 Surface Mount Surface Mount
MSL 等级 1 (unlimited floor life) 1
Lead Finish / Plating Pb-free (PBF suffix), Matte Tin —
Technology HEXFET fifth-generation IR MOSFET HEXFET (IR MOSFET)
RoHS 状态 Compliant Compliant (Lead-Free PBF suffix)
Moisture Sensitivity MSL1 per JEDEC J-STD-020 —
Manufacturer — Infineon Technologies
Part Status — Active
FET Type — N-Channel
Continuous Drain Current (ID) at Tc=25C — 56 A
On-Resistance RDS(on) max at VGS=10V — 16 mOhm
On-Resistance RDS(on) max at VGS=5V — [DATA_NEEDED: RDS(on) at 5V]
Power Dissipation (PD) at Tc=25C — 110 W
工作结温 — -55C to +175C
引脚数量 — 3 (Gate, Drain, Source) + Tab
无卤 — [DATA_NEEDED: halogen-free status]
Avalanche Rated — Yes (100% avalanche tested)

数据手册与资源

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