IRFS4010TRLPBF vs IRF5305STRLPBF 对比

详细并排对比 IRFS4010TRLPBF 出自 Infineon 和 IRF5305STRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRFS4010TRLPBF IRFS4010TRLPBF - 100V 180A 4.7mOhm N-Ch MOSFET | Infineon

IRFS4010TRLPBF - 100V 180A 4.7mOhm N-Ch MOSFET | Infineon

IRFS4010TRLPBF ✓ 量产中
Infineon
IRF5305STRLPBF IRF5305STRLPBF - 55V P-Ch MOSFET 31A 60mΩ | Infineon

IRF5305STRLPBF - 55V P-Ch MOSFET 31A 60mΩ | Infineon

IRF5305STRLPBF ✓ 量产中

规格对比

参数 IRFS4010TRLPBF IRF5305STRLPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.86 $0.92
FET Type N-Channel MOSFET —
Technology IR MOSFET (HEXFET) HEXFET (fifth generation), IR MOSFET
Drain-to-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25C 180 A -31 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
RDS(on) max @ VGS=10V 4.7 mOhm —
Gate-to-Source Voltage (VGS) max Plus or minus 20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] —
Total Gate Charge (Qg) 143 nC 42 nC (Mouser listing) / 63 nC (Future Electronics listing)
Power Dissipation (PD) at TC=25C 375 W —
工作结温 -55C to +175C —
封装 D2PAK (TO-263AB), surface mount TO-263 / D2PAK (surface mount)
安装类型 Surface Mount Surface Mount
Gate Drive Voltage 10 V (normal level, optimized) —
RoHS 状态 Compliant —
MSL 等级 1 —
Qualification JEDEC standard —
Polarity / Channel Type — P-Channel
Drain-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID) at TA=25C — [DATA_NEEDED: ID at TA=25C]
RDS(on) max at VGS=-10V — 60 mOhm
RDS(on) max at VGS=-4.5V — [DATA_NEEDED: RDS(on) at VGS=-4.5V]
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) typ]
Maximum Power Dissition at Tc — 110 W
Maximum Power Dissipation at TA — 3.8 W
工作温度范围 — [DATA_NEEDED: Tj max / operating range]
Packaging — Tape & Reel (TR), 800 pcs per reel
Lead-Free / RoHS — Yes (Pb-free suffix PBF)

数据手册与资源

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