IRFZ44NPBF vs FDP030N06 对比

详细并排对比 IRFZ44NPBF 出自 Infineon 和 FDP030N06 出自 onsemi。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRFZ44NPBF FDP030N06
品牌 Infineon onsemi
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.65 $1.89
FET Type N-Channel N-Channel MOSFET
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at Tc=25C 49 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-to-Source Voltage (VGS) max +/- 20 V —
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V 17.5 mOhm —
Total Gate Charge (Qg) 42 nC —
Power Dissipation (PD) at Tc=25C 94 W —
Thermal Resistance Junction-to-Case (RthJC) 1.0 C/W —
Thermal Resistance Junction-to-Ambient (RthJA) 62 C/W —
工作结温 -55C to +175C —
封装 TO-220AB (3-pin + tab) TO-220-3 (3+Tab)
安装类型 Through Hole Through Hole
Technology HEXFET (Advanced Process) PowerTrench (Trench)
Avalanche Energy Rating (EAS) [DATA_NEEDED: EAS rating] —
RoHS 状态 Compliant [DATA_NEEDED: RoHS compliance status]
Drain to Source Voltage (Vdss) — 60 V
Continuous Drain Current (Id) @ 25C — 120 A (Tc)
Continuous Drain Current (datasheet rating) — 193 A (Tc, datasheet title rating)
RDS(on) Max @ Id, Vgs — 3.2 mOhm
RDS(on) Typ — 2.6 mOhm
Power Dissipation (Tc) — 231 W (Tc)
Gate Drive Type — Standard level gate drive
Switching Speed — Fast
Gate Input Resistance — Low gate input resistance (low gate charge)
Avalanche Test — 100% avalanche tested
Packing — Tube
Typical Applications — Power supply, switching applications

数据手册与资源

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