IRLML2030TRPBF vs IRLML2803TRPBF 对比
详细并排对比 IRLML2030TRPBF 出自 Infineon 和 IRLML2803TRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRLML2030TRPBF | IRLML2803TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.14 | $0.13 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IRLML2030TRPBF | IRLML2803TRPBF |
| FET Type | N-Channel | — |
| Technology | HEXFET (IR MOSFET) | IR MOSFET Generation V |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at Ta | 2.7 A | — |
| Power Dissipation (PD) at Ta | 1.3 W | — |
| On-Resistance RDS(on) max @ VGS=10V | 100 mOhm | — |
| On-Resistance RDS(on) max @ VGS=4.5V | 154 mOhm | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Gate Charge (Qg) typ | 1.0 nC | — |
| 封装 | Micro3 (SOT-23) | Micro3 / SOT-23 (3-pin) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -55C to +150C (junction) | — |
| MSL 等级 | MSL 1 | 1 |
| RoHS Compliance | Yes (lead-free, halogen-free) | Compliant, Halogen-Free |
| Qualification | JEDEC standard | — |
| Soldering | Wave-solder compatible | — |
| 晶体管类型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA=25C | — | 1.2 A |
| On-Resistance RDS(on) at VGS=4.5V | — | 250 mOhm maximum |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th)] |
| Gate Charge (Qg) | — | 3.3 nC typical |
| Power Dissipation (PD) at TA=25C | — | 540 mW |
| 工作温度范围 | — | -55C to +150C (TJ) |
| Gate Drive Level | — | Logic-level (driven from 3.3V / 5V) |