IRLR8726TRPBF vs BSC011N03LSIATMA1 对比
详细并排对比 IRLR8726TRPBF 出自 Infineon 和 BSC011N03LSIATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRLR8726TRPBF | BSC011N03LSIATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.32 | $1.32 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IRLR8726TRPBF | — |
| Technology | StrongIRFET™ (HEXFET) | — |
| Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (V_DS) | 30 V | — |
| Continuous Drain Current (I_D) at T_C | 86 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance R_DS(on) max | 5.8 mΩ at V_GS = 10 V | — |
| Gate Threshold Voltage V_GS(th) | [DATA_NEEDED: V_GS(th) min/max] | — |
| Gate Charge Q_g (typ.) | 15 nC | — |
| Power Dissipation P_D | 75 W at T_C | — |
| 工作结温 | -55C to +175C | -55 °C to +150 °C |
| 封装 | TO-252AA (DPAK) | PG-TDSON-8-7 (Surface Mount) |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数 | 3 (Gate, Drain, Source) | — |
| RoHS 状态 | Compliant | Compliant |
| 无卤 | Yes | — |
| MSL 等级 | 1 | 1 (per JEDEC J-STD-020) |
| Product Family | — | OptiMOS™ 30 V |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (ID) at TA=25°C | — | 37 A |
| Continuous Drain Current (ID) at TC=25°C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM value] |
| On-State Resistance RDS(on) at VGS=10V | — | 1.1 mΩ (typical) |
| Power Dissipation at TA=25°C | — | 2.5 W |
| Power Dissipation at TC=25°C | — | 96 W |