IRLU024NPBF vs IRF4905PBF 对比

详细并排对比 IRLU024NPBF 出自 Infineon 和 IRF4905PBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRLU024NPBF IRF4905PBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.61 $0.95
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRLU024NPBF —
FET Type N-Channel, Logic-Level P-Channel
Technology HEXFET Power MOSFET (5th generation) HEXFET (IR MOSFET)
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at TC=25C 17 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V 65 mOhm —
On-Resistance RDS(on) max at VGS=5V [DATA_NEEDED: RDS(on) at VGS=5V] —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) min/typ/max] —
Total Gate Charge (Qg) 10 nC (typical, per listing) 120 nC
Power Dissipation (PD) at TC=25C 45 W —
Thermal Resistance Junction-to-Case (RthJC) 3.3 C/W —
Thermal Resistance Junction-to-Ambient (RthJA) 110 C/W (50 C/W PCB-mounted) —
工作结温 -55C to +175C —
封装 IPAK (TO-251AA), Through Hole TO-220AB (through-hole)
安装类型 Through Hole Through Hole
Lead-Free / RoHS Yes (PBF suffix indicates lead-free plating) Yes (PBF suffix = lead-free, RoHS compliant)
Qualification JEDEC standard —
Gate Drive Voltage (optimized) 10 V (capable of 4.5 V) —
Drain-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID) at TC — -74 A
Power Dissipation (PD) at TC — 200 W
On-Resistance RDS(on) max at VGS=-10V — 20 mΩ
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/range]
工作温度范围 — -55 °C to +175 °C (junction)
Pin Configuration — Gate - Drain - Source (left to right)
MSL 等级 — 1 (not moisture-sensitive for TO-220)

数据手册与资源

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