IRS2011STRPBF vs IR2114SSPBF 对比

详细并排对比 IRS2011STRPBF 出自 Infineon 和 IR2114SSPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRS2011STRPBF IRS2011STRPBF - 200V Half-Bridge Gate Driver IC | Infineon

IRS2011STRPBF - 200V Half-Bridge Gate Driver IC | Infineon

IRS2011STRPBF ✓ 量产中

规格对比

参数 IRS2011STRPBF IR2114SSPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.55 $3.70
功能 Half-Bridge Gate Driver —
Configuration High-Side and Low-Side, Independent Channels Half-bridge gate driver
输出数量 2 2 (high-side + low-side)
Maximum Offset Voltage (High-Side) 200 V —
Output Current (Source / Sink) 1 A typical / 1 A typical —
Propagation Delay (ton/toff) 60 ns typical —
Delay Matching 20 ns maximum —
Logic Input Compatibility 3.3 V CMOS / LSTTL —
Bootstrap Supply Integrated bootstrap diode, floating channel —
Supply Voltage (VCC) 10 V to 20 V —
Negative Transient Tolerance Yes, dV/dt immune —
封装 8-SOIC (DSO-8) 24-SSOP (7.80 mm wide, 1.75 mm height)
工作温度 -40 C to +125 C -40 C to +125 C
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant (PBF suffix) Compliant
Suitable Drivers MOSFETs and IGBTs —
拓扑 — Non-inverting
Offset (high-side) Voltage (max) — 600 V
Gate Drive Supply (VCC) — 10 V to 20 V
Logic Supply (VDD) — 10 V to 20 V
Bootstrap Supply (VBS) — 10 V to 25 V (with respect to VS)
Source Current (typ.) — 2 A
Sink Current (typ.) — 3 A
Rise / Fall Time (typ.) — [DATA_NEEDED: rise/fall time]
Propagation Delay (typ.) — 50 ns
Input Logic Compatibility — 3.3 V / 5 V CMOS/LSTTL
UVLO Thresholds — VCC and VBS, internally set
Integrated Bootstrap Diode — Yes
Over-Current Shutdown — Yes (programmable, with FAULT output)

数据手册与资源

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