IRS2110STRPBF vs IR2110STRPBF 对比

详细并排对比 IRS2110STRPBF 出自 Infineon 和 IR2110STRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRS2110STRPBF IRS2110STRPBF - 500V High/Low-Side Gate Driver | Infineon

IRS2110STRPBF - 500V High/Low-Side Gate Driver | Infineon

IRS2110STRPBF ✓ 量产中

规格对比

参数 IRS2110STRPBF IR2110STRPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.42 $1.35
Driver Configuration Half-Bridge —
Number of Drivers 2 (High-Side and Low-Side) 2 (High-Side + Low-Side)
输出数量 2 —
输出类型 Non-Inverting Non-Inverting
Maximum Offset Voltage 500 V —
Gate Drive Supply (VCC) 10 V to 20 V —
Source/Sink Output Current (typ.) 2.5 A / 2.5 A —
Propagation Delay ton/toff (typ.) 30 ns / 30 ns —
Rise/Fall Time (typ.) 17 ns / 25 ns —
Logic Input Compatibility CMOS/TTL compatible (3.3 V logic compatible) CMOS / LSTTL, down to 3.3 V logic
Bootstrap Diode Integrated —
Shutdown Input Active-low, forces both outputs low —
Undervoltage Lockout Yes (VCC and VBS) —
工作温度 -40 C to +150 C —
封装 16-pin SOIC Wide-Body (SOIC-WB), Tape and Reel 16-SOIC (SOIC W / 2110-S16)
安装类型 Surface Mount Surface Mount
MSL 等级 3 (168 hours) [DATA_NEEDED]
Lead-Free / RoHS Lead-Free, RoHS Compliant —
功能 — Half-Bridge Gate Driver
Driven Configuration — Half-Bridge
Channel Type — Independent, Synchronous
Peak Output Current (Source/Sink) — 2.5 A / 2.5 A
Offset Voltage (High-Side, max) — 500 V
Supply Voltage (VCC) — 10 V to 20 V
Input Threshold — Logic-level compatible (3.3 V / 5 V)
Undervoltage Lockout (UVLO) — Yes (both VCC and VBS)
Bootstrap Supply — Required for high-side channel
Rise Time (Typ) — 25 ns (at 1 nF load) [DATA_NEEDED: per-datasheet spec conditions]
Fall Time (Typ) — 17 ns (at 1 nF load) [DATA_NEEDED: per-datasheet spec conditions]
Propagation Delay (Typ) — [DATA_NEEDED: per-datasheet spec conditions]
工作温度范围 — -40 C to +125 C
RoHS 状态 — Compliant (Pb-free, PBF suffix)
Lead-Free — Yes (PBF suffix)
Qualification — [DATA_NEEDED: AEC-Q100 status]

数据手册与资源

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