IS43TR16256AL-107MBLI vs IS43TR16256AL-125KBLI-TR 对比

详细并排对比 IS43TR16256AL-107MBLI 出自 ISSI, Integrated Silicon Solution Inc 和 IS43TR16256AL-125KBLI-TR 出自 ISSI, Integrated Silicon Solution Inc。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-107MBLI IS43TR16256AL-107MBLI - 4Gb DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-107MBLI - 4Gb DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-107MBLI ✓ 量产中
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBLI-TR IS43TR16256AL-125KBLI-TR - 4Gbit DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-125KBLI-TR - 4Gbit DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-125KBLI-TR ✓ 量产中

规格对比

参数 IS43TR16256AL-107MBLI IS43TR16256AL-125KBLI-TR
品牌 ISSI, Integrated Silicon Solution Inc ISSI, Integrated Silicon Solution Inc
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.00 $8.25
存储器类型 DDR3L SDRAM DDR3L SDRAM
存储容量 4 Gbit 4Gbit (256M x 16)
存储组织 256M x 16 —
Clock Speed 933 MHz —
数据速率 1866 Mbps 1600 Mbps
Access Time 20 ns —
电源电压 1.35V (backward compatible to 1.5V) —
封装 / 外壳 96-TWBGA (9x13mm) —
安装类型 Surface Mount Surface Mount
工作温度 [DATA_NEEDED: operating temperature range] —
Number of Banks 8 —
Burst Length 8 and 4 8
On-Die Termination Yes —
RoHS 状态 Compliant Compliant
Memory Interface Parallel —
数据总线宽度 — 16 bit
Clock Frequency — 800 MHz
CAS 延迟 — 11
Supply Voltage (VDD/VDDQ) — 1.35V ± 0.1V, -0.067V
Backward Compatible Voltage — 1.5V
Row Cycle Time (tRC) — 20 ns
Row Active Time (tRAS) — 20 ns
工作温度范围 — -40°C to +95°C (TC)
封装 — 96-TWBGA (9x13 mm)
On-Die Termination (ODT) — Yes
Refresh Modes — Auto-refresh, Self-refresh

数据手册与资源

浏览全部产品 创建 BOM 获取报价