ISC011N03L5SATMA1 vs IAUT300N10S5N015ATMA1 对比
详细并排对比 ISC011N03L5SATMA1 出自 Infineon 和 IAUT300N10S5N015ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IAUT300N10S5N015ATMA1 - 100V 300A OptiMOS 5 N-MOSFET | Infineon
IAUT300N10S5N015ATMA1 ✓ 量产中规格对比
| 参数 | ISC011N03L5SATMA1 | IAUT300N10S5N015ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.47 | $4.10 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 / StrongIRFET 30 V | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | 100 V |
| Continuous Drain Current (ID) @ Ta=25C | 37 A | — |
| Continuous Drain Current (ID) @ Tc=25C | 100 A | — |
| Power Dissipation (PD) @ Ta=25C | 2.5 W | — |
| Power Dissipation (PD) @ Tc=25C | 96 W | — |
| 封装 | PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) | PG-HSOF-8-1 (HSOF-8) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -55 C to +175 C (TJ) | — |
| Technology | OptiMOS 5 trench MOSFET | OptiMOS 5 N-Channel Power MOSFET |
| Gate Drive | Logic-level compatible | — |
| RoHS 状态 | Compliant | — |
| MSL 等级 | 1 (per JEDEC J-STD-020) | MSL1 (260°C peak reflow) |
| Continuous Drain Current (ID, Tc) | — | 300 A |
| Power Dissipation (PD, Tc) | — | 375 W |
| RDS(on) (typ, VGS=10V) | — | 1.5 mΩ |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th), typ) | — | [DATA_NEEDED: VGS(th) value] |
| 工作温度范围 | — | -55°C to +175°C |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS Compliance | — | RoHS compliant (Green product) |
| Avalanche Tested | — | 100% avalanche tested |
| Polarity | — | N-Channel |
| Mode of Operation | — | Enhancement-mode |