ISC011N06LM5ATMA1 vs BSC027N06LS5ATMA1 对比
详细并排对比 ISC011N06LM5ATMA1 出自 Infineon 和 BSC027N06LS5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | ISC011N06LM5ATMA1 | BSC027N06LS5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.74 | $0.66 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | ISC011N06LM5ATMA1 | — |
| Technology | OptiMOS 5 | MOSFET (Metal Oxide) |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) at Ta | 37 A | — |
| Continuous Drain Current (ID) at Tc | 288 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 188 W | — |
| RDS(on) max at VGS=10V | 1.15 mOhm | — |
| 封装 | PG-TDSON-8-17 (SuperSO8 5x6 mm) | — |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数量 | 8 | 8 |
| 工作温度范围 | -55C to +175C | -55°C to +150°C |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | [DATA_NEEDED: MSL level] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | Logic-level |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Series | — | OptiMOS™ 5 |
| Part Status | — | Active |
| FET Type | — | N-Channel |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (ID) at Tc=25°C | — | 100 A |
| Continuous Drain Current (ID) at Tc=100°C | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM] |
| On-Resistance (RDS(on)) max @ VGS=10V | — | 2.7 mOhm |
| On-Resistance (RDS(on)) @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Power Dissipation (PD) at Tc=25°C | — | 83 W |
| 封装 / 外壳 | — | PG-TDSON-8-7 (SuperSO8 5x6) |
| Gate Charge (Qg) | — | [DATA_NEEDED: total Qg] |
| Avalanche Energy Rated | — | Yes |
| MSL (Moisture Sensitivity Level) | — | MSL1 |