ISC037N12NM6ATMA1 vs IPTC017N12NM6ATMA1 对比
详细并排对比 ISC037N12NM6ATMA1 出自 Infineon 和 IPTC017N12NM6ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | ISC037N12NM6ATMA1 | IPTC017N12NM6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.62 | $3.95 |
| Technology | OptiMOS 6 (N-channel trench MOSFET) | OptiMOS 6, N-channel trench MOSFET |
| Drain-Source Voltage (Vds) | 120 V | — |
| Continuous Drain Current (Id) at Ta=25C | 19.2 A | — |
| Pulsed Drain Current (Idm) at Tc | 163 A | — |
| On-Resistance Rds(on) typ at Vgs=10V | 3.7 mOhm | — |
| Power Dissipation at Ta | 3 W | — |
| Power Dissipation at Tc | 214 W | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | — |
| Gate Charge (Qg) typ | [DATA_NEEDED: Qg total] | — |
| 封装 | PG-TDSON-8 FL (SuperSO8) | PG-HDSOP-16 (Surface Mount) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +175C (junction) | — |
| RoHS 状态 | Compliant | Compliant |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| MSL 等级 | 1 (per JEDEC J-STD-020) | — |
| Drain-Source Voltage (VDS) | — | 120 V |
| Continuous Drain Current (ID, Ta) | — | 32 A |
| Continuous Drain Current (ID, Tc) | — | 331 A |
| On-State Resistance RDS(on) max | — | 1.7 mΩ at VGS = 10 V |
| Gate-Source Threshold VGS(th) | — | 2.4 V (typ) |
| Total Gate Charge QG | — | 141 nC at VGS = 10 V |
| Input Capacitance Ciss | — | 2.4 nF at VDS = 60 V |
| Output Capacitance Coss | — | 11000 pF at VDS = 60 V |
| Power Dissipation (Ta) | — | 3.8 W |
| Power Dissipation (Tc) | — | 395 W |
| 工作温度 | — | -55 °C to +175 °C (TJ max) |
| Gate Drive Voltage (recommended) | — | 10 V |