ISZ019N03L5SATMA1 vs BSC028N06NSTATMA1 对比

详细并排对比 ISZ019N03L5SATMA1 出自 Infineon 和 BSC028N06NSTATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC028N06NSTATMA1 BSC028N06NSTATMA1 - 60V 2.8mΩ N-Ch OptiMOS 5 MOSFET | Infineon

BSC028N06NSTATMA1 - 60V 2.8mΩ N-Ch OptiMOS 5 MOSFET | Infineon

BSC028N06NSTATMA1 ✓ 量产中

规格对比

参数 ISZ019N03L5SATMA1 BSC028N06NSTATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.48 $0.40
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 (<= 40V) —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 30 V 60 V
Continuous Drain Current (ID) at TA=25C 22 A 24 A
Continuous Drain Current (ID) at TC=25C 40 A 100 A
RDS(on) at VGS=10V 1.9 mΩ (typical, ID=20A) —
Gate Threshold Voltage (VGS(th)) 2 V (typical) —
Gate-Source Voltage Rating (VGS) ±20 V —
Total Gate Charge (Qg) 44 nC at VGS=10V —
Input Capacitance (Ciss) 2800 pF at VDS=15V —
封装 PG-TSDSON-8-FL (5x6 mm) PG-TDSON-8-7 (SuperSO8, 5x6 mm)
安装类型 Surface Mount Surface Mount
工作温度范围 -55C to +175C (TJ max) —
MSL 等级 1 (per JEDEC J-STD-020) 1
RoHS / REACH Compliant —
Avalanche Rated Yes —
RG-tested 100% —
Series — OptiMOS 5
Part Number Base — BSC028N06NS
Technology — MOSFET N-Channel (OptiMOS 5)
On-Resistance RDS(on) max at VGS=10V — 2.8 mOhm
Gate Threshold Voltage VGS(th) typ — 2.5 V to 3.5 V
Total Gate Charge Qg — 37 nC @ VGS=10V
Input Capacitance Ciss — 3000 nC [DATA_NEEDED: confirm exact pF from datasheet]
Output Capacitance Coss — 825 pF
Reverse Transfer Capacitance Crss — 56 pF
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 100 W
工作结温 — -55C to +175C
RoHS 状态 — Compliant
无卤 — Yes
AEC-Q101 Automotive Qualified — [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ]

数据手册与资源

浏览全部产品 创建 BOM 获取报价