ISZ033N03LF2SATMA1 vs IQE013N04LM6ATMA1 对比
详细并排对比 ISZ033N03LF2SATMA1 出自 Infineon 和 IQE013N04LM6ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IQE013N04LM6ATMA1 - 40V 1.35mΩ OptiMOS N-FET, PQFN 3.3x3.3 | Infineon
IQE013N04LM6ATMA1 ✓ 量产中规格对比
| 参数 | ISZ033N03LF2SATMA1 | IQE013N04LM6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.68 | $0.71 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 40 V |
| Continuous Drain Current (ID) at TA=25C | 20 A | — |
| Continuous Drain Current (ID) at TC=25C | 109 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD) at TA=25C | 3 W | — |
| Power Dissipation (PD) at TC=25C | 71 W | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | 2.35 V max @ 30 uA | 2 V (typ) |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at 10V VGS] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | — |
| 工作结温 | -55 C to +175 C | — |
| 封装 | PG-TSDSON-8 FL (8-pin) | PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 | OptiMOS N-channel trench MOSFET |
| RoHS 状态 | Compliant | Compliant |
| Polarity | — | N-Channel |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (Ta) | — | 31 A |
| Continuous Drain Current (Tc) | — | 205 A |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 107 W |
| On-Resistance RDS(on) max | — | [DATA_NEEDED: RDS(on) max value at VGS=10V] |
| On-Resistance RDS(on) typ | — | 1.35 mΩ @ VGS=10 V, ID=20 A |
| 工作温度范围 | — | -55 °C to +175 °C |
| Source-Down Topology | — | Yes (flip-chip die attach, drain on top thermal pad) |