ISZ230N10NM6ATMA1 vs IAUCN04S7N015GATMA1 对比
详细并排对比 ISZ230N10NM6ATMA1 出自 Infineon 和 IAUCN04S7N015GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | ISZ230N10NM6ATMA1 | IAUCN04S7N015GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.71 | $2.21 |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (Ta) | 7.7 A | — |
| Continuous Drain Current (Tc) | 31 A | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 48 W | — |
| On-Resistance RDS(on) at VGS=10V | 23 mΩ (typ, ID=10A) | — |
| Gate Threshold Voltage VGS(th) | 3.3 V (typ at 13 µA) | — |
| Technology | OptiMOS 6 trench MOSFET | — |
| 封装 | PG-TSDSON-8 FL (3.3 x 3.3 mm) | PG-THSOG-4-1 (SSO4G 5x6) surface mount |
| 安装类型 | Surface Mount | Surface Mount (IMS-compatible source-down) |
| 工作温度范围 | -55 °C to +150 °C (junction) | — |
| Gate Drive Voltage (recommended) | 10 V | — |
| MSL 等级 | MSL1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| RoHS 状态 | Compliant | Compliant |
| Family | OptiMOS 6 (100V class) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 7 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D) | — | 165 A (Tc) |
| Power Dissipation (P_D) | — | 96 W (Tc) |
| R_DS(on) max | — | 1.53 mΩ at V_GS=10 V |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical] |
| 工作结温 | — | -55C to +175C |
| Automotive Qualification | — | AEC-Q101 qualified |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: total gate charge] |