ISZ230N10NM6ATMA1 vs IQEH68NE2LM7UCGATMA1 对比
详细并排对比 ISZ230N10NM6ATMA1 出自 Infineon 和 IQEH68NE2LM7UCGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | ISZ230N10NM6ATMA1 | IQEH68NE2LM7UCGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.71 | $1.35 |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 25 V |
| Continuous Drain Current (Ta) | 7.7 A | — |
| Continuous Drain Current (Tc) | 31 A | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 48 W | — |
| On-Resistance RDS(on) at VGS=10V | 23 mΩ (typ, ID=10A) | — |
| Gate Threshold Voltage VGS(th) | 3.3 V (typ at 13 µA) | — |
| Technology | OptiMOS 6 trench MOSFET | OptiMOS 7 trench MOSFET |
| 封装 | PG-TSDSON-8 FL (3.3 x 3.3 mm) | PG-TTFN-9-3 (surface mount) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55 °C to +150 °C (junction) | -55 °C to +175 °C (typical for OptiMOS 7) |
| Gate Drive Voltage (recommended) | 10 V | — |
| MSL 等级 | MSL1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL Level] |
| RoHS 状态 | Compliant | Compliant (per distributor listing) |
| Family | OptiMOS 6 (100V class) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 7 |
| 晶体管类型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) @ Ta | — | 47 A |
| Pulsed Drain Current (IDM) @ Tc | — | 338 A |
| Power Dissipation (PD) @ Ta | — | 2.5 W |
| Power Dissipation (PD) @ Tc | — | 130 W |
| Gate Threshold Voltage Type | — | Logic-level (per OptiMOS 7 family) |
| On-Resistance Family | — | RDS(on)10 / RDS(on)45 (10V and 4.5V rated) |
| Maximum Junction Temperature | — | 175 °C |
| Packaging | — | Tape & Reel (per ATMA1 suffix) |