ITS4200SMEPHUMA1 vs BTS3050EJXUMA1 对比

详细并排对比 ITS4200SMEPHUMA1 出自 Infineon 和 BTS3050EJXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
ITS4200SMEPHUMA1 ITS4200SMEPHUMA1 - 1.4A Smart High-Side Switch | Infineon

ITS4200SMEPHUMA1 - 1.4A Smart High-Side Switch | Infineon

ITS4200SMEPHUMA1 ✓ 量产中
Infineon
BTS3050EJXUMA1 BTS3050EJXUMA1 - 50mΩ 4A Smart Low-Side Switch | Infineon

BTS3050EJXUMA1 - 50mΩ 4A Smart Low-Side Switch | Infineon

BTS3050EJXUMA1 ✓ 量产中

规格对比

参数 ITS4200SMEPHUMA1 BTS3050EJXUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.99 $0.86
Product Type Smart High-Side Power Switch Smart Low-Side Power Switch
拓扑 High-Side, N-Channel MOSFET Low-Side Switch (1:1)
Number of Channels 1 1 (Single channel)
Continuous Load Current 1.4 A 4 A
On-State Resistance (Rdson) 150 milliohm (typical) —
Supply Voltage Range -3 V to 45 V —
Overvoltage Protection Yes (load-dump resilient) —
Undervoltage Shutdown Yes —
Short Circuit Protection Yes —
热关断 Yes (with auto-restart) —
Current Limitation Yes —
Input Logic Type Current-Controlled, CMOS-compatible —
Inductive Load Switching Yes —
封装 PG-SOT223-4 (4-pin, 3+Tab) PG-TDSO-8-31 (TDSO8-31)
安装类型 Surface Mount Surface Mount
工作温度 -40C to +125C (automotive grade) —
AEC-Q100 Qualification Yes —
Technology Smart Power (vertical N-DMOS + charge pump + CMOS logic) N-Channel Vertical Power MOSFET (HITFET +12V)
RoHS 状态 Compliant Compliant
On-State Resistance (RDS(on)) — 50 mΩ (typical at 25 °C)
Supply Voltage (Vbb) — [DATA_NEEDED: Vbb max rating]
Load Voltage — 12 V automotive nominal
ESD Protection — Yes (on IN pin / Source / Ground)
Thermal Protection — Auto-restart overtemperature shutdown
限流 — [DATA_NEEDED: ILIM value]
工作温度范围 — [DATA_NEEDED: Tj range]
Automotive Grade — AEC-Q100 qualified (HITFET +12V family)

数据手册与资源

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