K3K8K80BM-JGCT vs K3KCKC0BM-JGCT 对比
详细并排对比 K3K8K80BM-JGCT 出自 Samsung Electronics 和 K3KCKC0BM-JGCT 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K3K8K80BM-JGCT - Samsung LPDDR DRAM Memory IC | Samsung Electronics
K3K8K80BM-JGCT ✓ 量产中规格对比
| 参数 | K3K8K80BM-JGCT | K3KCKC0BM-JGCT |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.10 | $0.00 |
| Manufacturer | Samsung Electronics | — |
| Product Family | K3K mobile DRAM (LPDDR) component series | — |
| 存储器类型 | Low Power DRAM (LPDDR) component | LPDDR5 SDRAM |
| Density | [DATA_NEEDED: die density in Gb] | 64 Gb |
| 存储组织 | [DATA_NEEDED: x8/x16 organization] | [DATA_NEEDED: organization (x32/x16)] |
| 接口 | [DATA_NEEDED: LPDDR4X or LPDDR5] | LPDDR5 (Low Power Double Data Rate 5) |
| Maximum Data Rate | [DATA_NEEDED: Mbps] | — |
| Supply Voltage (VDD) | [DATA_NEEDED: core supply voltage] | — |
| Supply Voltage (VDDQ) | [DATA_NEEDED: I/O supply voltage] | — |
| Package Type | FBGA (Ball Grid Array) | FBGA (fine-pitch ball grid array) |
| Ball Count | [DATA_NEEDED: package ball count] | [DATA_NEEDED: ball count] |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Speed Grade Suffix | J (per Samsung speed-grade coding) | JGCT |
| Packing Suffix | CT (per Samsung packing-code convention) | — |
| RoHS 状态 | [DATA_NEEDED: RoHS compliance] | unknown |
| MSL 等级 | [DATA_NEEDED: moisture sensitivity level] | — |
| Max Pin Speed (family reference K3LKCKC0BM-MGCP) | — | 6400 Mbps |
| Supply Voltage Core (VDD1) | — | [DATA_NEEDED: VDD1 voltage] |
| Supply Voltage I/O (VDD2/VDDQ) | — | [DATA_NEEDED: VDDQ voltage] |
| Refresh Mode | — | Self-refresh with partial array self-refresh (PASR) |
| Power Features | — | DVFSC, deep power-down |
| Packaging | — | [DATA_NEEDED: packing type and standard quantity] |