K3KL2L20DM-JGCT vs K3LK3L30CM-BGCU 对比
详细并排对比 K3KL2L20DM-JGCT 出自 Samsung Electronics 和 K3LK3L30CM-BGCU 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K3KL2L20DM-JGCT | K3LK3L30CM-BGCU |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $20.80 | $29.60 |
| 存储器类型 | LPDDR5X SDRAM | LPDDR5X SDRAM (Low Power Double Data Rate 5X) |
| Density | 48 Gb | 64 Gb (8 GB) |
| 存储组织 | x64 | [DATA_NEEDED: organization / bus width] |
| 数据速率 | 7500 Mbps | 8533 Mbps per pin |
| Supply Voltage (VDD1) | 1.8 V | — |
| Supply Voltage (VDD2) | 1.05 V | — |
| Supply Voltage (VDDQ) | 0.5 V | — |
| Core Voltage Rail | 0.9 V | — |
| 工作温度 | -25C to +85C | [DATA_NEEDED: operating temperature range] |
| 封装 | 441-ball FBGA | 496-ball FBGA (BGC) |
| 安装类型 | Surface Mount | Surface Mount (BGA) |
| 接口 | LPDDR5X (JEDEC low-power DRAM interface) | — |
| Product Status | Mass Production | — |
| Generation | LPDDR5X (1.25x speed, 25% better power efficiency vs LPDDR5) | — |
| Application Segment | AI devices, automotive, mobile | — |
| RoHS 状态 | unknown | [DATA_NEEDED: RoHS status] |
| Die Configuration | — | Stacked DRAM die (multi-die package) |
| Supply Voltage VDD | — | [DATA_NEEDED: VDD voltage] |
| Supply Voltage VDDQ | — | [DATA_NEEDED: VDDQ voltage] |
| Power Efficiency | — | Approx. 25% better than previous LPDDR generation (per Samsung LPDDR5X announcement) |
| Speed vs Prior Generation | — | Up to 1.25x faster than previous generation (per Samsung LPDDR5X announcement) |
| Target Applications | — | AI devices, in-vehicle devices, mobile computing |
| MSL 等级 | — | [DATA_NEEDED: moisture sensitivity level] |
| Packaging | — | [DATA_NEEDED: tray / reel and standard quantity] |