K3KL3L30CM-BGCU vs K3KL8L80DM-MGCU 对比
详细并排对比 K3KL3L30CM-BGCU 出自 Samsung Electronics 和 K3KL8L80DM-MGCU 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K3KL3L30CM-BGCU | K3KL8L80DM-MGCU |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.00 | $0.00 |
| 存储器类型 | LPDDR5X SDRAM (Volatile DRAM) | LPDDR5X SDRAM |
| 存储容量 | 64 Gb (8 GB) | — |
| 数据速率 | 8533 Mbps | [DATA_NEEDED: max data rate / speed grade] |
| Memory Organization | x64 | — |
| Technology | LPDDR5X (JEDEC LPDDR5X-class low-power DRAM) | — |
| 封装 | FBGA-496 (BGCU) | FBGA-315 |
| 安装类型 | Surface Mount | Surface Mount |
| Die Configuration | Stacked multi-die DRAM | — |
| 接口 | LPDDR5X (standard LPDDR ball interface) | LPDDR5X (JEDEC LPDDR5 backward-compatible) |
| Application Segment | AI devices and automotive | Mobile / Automotive / Edge AI |
| Power Efficiency | Approx. 25% better than previous LPDDR5 generation (per Samsung) | — |
| Speed Improvement | Up to 1.25x faster than previous generation (per Samsung) | — |
| Supply Voltage Class | [DATA_NEEDED: VDD/VDDQ voltage] | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| MSL 等级 | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: moisture sensitivity level] |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | unknown |
| Place of Origin (per distributor listing) | Johor, Malaysia | — |
| Density | — | 8 Gbit |
| 存储组织 | — | 1G x 32 |
| Supply Voltage (VDD) | — | 1.05 V |
| Refresh | — | Self-refresh with per-bank refresh support |
| Power Management | — | Deep Sleep Mode (LPDDR5 feature set) |
| Configuration | — | Single-die, 32-bit bus |