K3KL3L30QM-JGCT vs K3KL3L30DM-BGCU 对比
详细并排对比 K3KL3L30QM-JGCT 出自 Samsung Electronics 和 K3KL3L30DM-BGCU 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K3KL3L30QM-JGCT | K3KL3L30DM-BGCU |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 停产 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.00 | $45.94 |
| 存储器类型 | Volatile - DRAM | LPDDR5X DRAM |
| Technology | LPDDR5X | — |
| 存储容量 | 64 Gb | — |
| Memory Organization | x64 | — |
| Maximum Data Rate | 7500 Mbps/pin | — |
| 接口类型 | Parallel LPDDR5X | — |
| Clock Rate | [DATA_NEEDED: clock rate] | — |
| Supply Voltage VDD | [DATA_NEEDED: VDD voltage] | — |
| Supply Voltage VDDQ | [DATA_NEEDED: VDDQ voltage] | — |
| Access Time / Latency | [DATA_NEEDED: CAS latency] | — |
| 封装 | [DATA_NEEDED: package code and dimensions] | 496-ball FBGA |
| Ball Count | [DATA_NEEDED: ball count] | — |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | [DATA_NEEDED: operating temperature range] | -25 C to +85 C |
| Product Status | Sampling (per distributor data) | EOL |
| Packaging | Plateau (tray style, per distributor data) | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Density | — | 64 Gb |
| 存储组织 | — | x64 |
| 数据速率 | — | 8533 Mbps |
| Supply Voltage (VDD1) | — | 1.8 V |
| Supply Voltage (VDD2) | — | 1.05 V |
| Supply Voltage (VDDQ) | — | 0.5 V |
| Core Voltage Rail | — | 0.9 V |
| 接口 | — | LPDDR5X (JEDEC low-power DRAM interface) |
| 品牌 | — | Samsung Semiconductor |
| Application Segment | — | Mobile, consumer electronics, embedded systems |