K3KL5L50DM-BGCU vs K3KL3L30DM-BGCU 对比

详细并排对比 K3KL5L50DM-BGCU 出自 Samsung Electronics 和 K3KL3L30DM-BGCU 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K3KL5L50DM-BGCU K3KL5L50DM-BGCU - LPDDR5X 128Gb 8533Mbps DRAM | Samsung

K3KL5L50DM-BGCU - LPDDR5X 128Gb 8533Mbps DRAM | Samsung

K3KL5L50DM-BGCU ✓ 量产中
Samsung Electronics
K3KL3L30DM-BGCU K3KL3L30DM-BGCU - LPDDR5X 64Gb 8533Mbps DRAM | Samsung

K3KL3L30DM-BGCU - LPDDR5X 64Gb 8533Mbps DRAM | Samsung

K3KL3L30DM-BGCU ✗ 停产

规格对比

参数 K3KL5L50DM-BGCU K3KL3L30DM-BGCU
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 有效 停产
库存状态 有库存 有库存
单价(USD) $0.00 $45.94
存储器类型 LPDDR5X SDRAM LPDDR5X DRAM
Density 128 Gb (16 GB) 64 Gb
数据速率 8533 Mbps per pin 8533 Mbps
存储组织 [DATA_NEEDED: organization (x)] x64
Supply Voltage (VDD) [DATA_NEEDED: VDD voltage] —
封装 [DATA_NEEDED: package ball count / FBGA code] 496-ball FBGA
安装类型 Surface Mount (BGA) Surface Mount
工作温度 [DATA_NEEDED: operating temperature range] -25 C to +85 C
接口 LPDDR5X (JEDEC low-power DRAM interface) LPDDR5X (JEDEC low-power DRAM interface)
Prefetch 16n (LPDDR5/5X architecture) —
Power Efficiency approx. 20% better than LPDDR5 (per Samsung LPDDR5X family page) —
CAS 延迟 [DATA_NEEDED: CAS latency] —
Refresh [DATA_NEEDED: refresh scheme] —
RoHS 状态 unknown [DATA_NEEDED: RoHS status]
Production Status In production (in stock at distributors) —
MSL 等级 [DATA_NEEDED: moisture sensitivity level] —
Supply Voltage (VDD1) — 1.8 V
Supply Voltage (VDD2) — 1.05 V
Supply Voltage (VDDQ) — 0.5 V
Core Voltage Rail — 0.9 V
Product Status — EOL
品牌 — Samsung Semiconductor
Application Segment — Mobile, consumer electronics, embedded systems

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