K3LK8K80CM-MFCP vs K3LK4L40DM-BGCT 对比
详细并排对比 K3LK8K80CM-MFCP 出自 Samsung Electronics 和 K3LK4L40DM-BGCT 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics
K3LK4L40DM-BGCT ✓ 量产中规格对比
| 参数 | K3LK8K80CM-MFCP | K3LK4L40DM-BGCT |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.00 | $40.50 |
| 存储器类型 | LPDDR5 SDRAM | DRAM (SDRAM component) |
| Density | 48 Gbit (6 GB) | [DATA_NEEDED: Density] |
| 存储组织 | [DATA_NEEDED: organization (x width)] | — |
| Pin Speed | 6400 Mbps | — |
| Data Rate (package) | 51.2 GB/s (family max) | — |
| 接口 | LPDDR5 (JESD209-5 class low-power DRAM interface) | — |
| 封装 | 315-ball FBGA (MFCP) | — |
| Ball Count | 315 | — |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -40 C to +105 C (automotive-grade) | [DATA_NEEDED: Operating Temperature Range] |
| 电源电压 | [DATA_NEEDED: VDD/VDDQ voltage] | — |
| Power Saving vs LPDDR4X | Approximately 20% | — |
| Generation | LPDDR5 (5th generation low-power DRAM) | — |
| Application Grade | Automotive-grade storage chip | — |
| Place of Origin | Johor, Malaysia | — |
| RoHS 状态 | unknown | [DATA_NEEDED: RoHS Status] |
| Manufacturer | — | Samsung Electronics |
| Organization (x-width) | — | [DATA_NEEDED: Organization] |
| 数据速率 | — | [DATA_NEEDED: Data Rate] |
| Supply Voltage Class | — | [DATA_NEEDED: Supply Voltage] |
| CAS 延迟 | — | [DATA_NEEDED: CAS Latency] |
| Package Type | — | BGA (per -BGC ordering-code suffix) |
| Package Ball Count | — | [DATA_NEEDED: Ball Count] |
| Refresh Rate | — | [DATA_NEEDED: Refresh Interval] |
| Lead Free | — | [DATA_NEEDED: Lead-Free Status] |
| MSL 等级 | — | [DATA_NEEDED: Moisture Sensitivity Level] |
| Packaging | — | Tape & Reel (per -T-style suffix convention) [DATA_NEEDED: confirmed packaging] |