K4A8G085WB vs K4A8G085WB-BCTD 对比
详细并排对比 K4A8G085WB 出自 Samsung Electronics 和 K4A8G085WB-BCTD 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A8G085WB | K4A8G085WB-BCTD |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $5.20 | $7.50 |
| 存储器类型 | DDR4 SDRAM (B-die) | DDR4 SDRAM |
| Density | 8 Gbit | — |
| 存储组织 | 1G x 8 | — |
| 电源电压 | 1.2 V | 1.2 V |
| 封装 | 78-pin FBGA | FBGA-78 (TFBGA) |
| 安装类型 | Surface Mount | — |
| Operating Mode | DLL Enabled mode (per datasheet) | — |
| Speed Grade Suffixes | -BCRC, -BIRC, -BCTD, -BCPB (per family naming) | — |
| 数据速率 | [DATA_NEEDED: speed grade data rate in Mbps] | 3200 Mbps (PC4-25600) |
| tCL/cas latency | [DATA_NEEDED: CAS latency] | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | 0°C to +95°C (TC) |
| Refresh | [DATA_NEEDED: refresh rate 1x/2x] | — |
| Bank Groups | [DATA_NEEDED: bank/bank group count] | — |
| Package Dimensions | [DATA_NEEDED: package dimensions] | — |
| MSL 等级 | [DATA_NEEDED: moisture sensitivity level] | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | Compliant |
| Termination Voltage (VTT) | [DATA_NEEDED: VTT value] | — |
| 存储容量 | — | 8 Gb (1G x 8) |
| Speed Bin | — | CL22-22-22 |
| Burst Length | — | 8 (BL8) |
| On-Die Termination | — | Yes (ODT) |
| ZQ Calibration | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| Data Mask Function | — | Yes |
| JESD-30 Code | — | R-PBGA-B78 |
| Number of Terminals | — | 78 |