K4B4G1646D-BYK00 vs MT41K256M16HA-15EM:E 对比
详细并排对比 K4B4G1646D-BYK00 出自 Samsung Electronics 和 MT41K256M16HA-15EM:E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K4B4G1646D-BYK00 - 4Gb DDR3L SDRAM 256Mx16 96FBGA | Samsung
K4B4G1646D-BYK00 ✓ 量产中Micron Technology
MT41K256M16HA-15EM:E - 4Gb DDR3L SDRAM 256Mx16 | Micron
MT41K256M16HA-15EM:E ✓ 量产中规格对比
| 参数 | K4B4G1646D-BYK00 | MT41K256M16HA-15EM:E |
|---|---|---|
| 品牌 | Samsung Electronics | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $7.50 | $5.95 |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gbit |
| 存储组织 | 256M x 16 | 256M x 16 |
| 数据速率 | 1600 Mbps | 1333 Mbps (DDR3L-1333) |
| 电源电压 | 1.35 V (also operates at 1.5 V) | 1.35 V (1.5V compatible) |
| 封装 | 96-ball TFBGA | 96-ball FBGA (9x14mm) |
| Number of Terminals | 96 | — |
| 工作温度 | 0°C to 85°C | [DATA_NEEDED: operating temperature range] |
| CAS 延迟 | Programmable | 15 |
| Additional Features | Auto precharge, asynchronous reset, ZQ calibration, data mask, dynamic on-chip termination | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| 无卤 | Yes | — |
| Package Shape | RECTANGULAR | — |
| Temperature Grade | OTHER | — |
| 安装类型 | — | Surface Mount |
| RoHS 状态 | — | Compliant |
| 引脚数 | — | 96 |
| Access Time | — | 13.75 ns |
| Clock Frequency | — | 800 MHz |
| 接口 | — | Parallel |