K4B4G1646E-BYMA vs H5TC4G63CFR-XXJ 对比
详细并排对比 K4B4G1646E-BYMA 出自 Samsung Electronics 和 H5TC4G63CFR-xxJ 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4B4G1646E-BYMA | H5TC4G63CFR-xxJ |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $14.32 | $5.90 |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gb |
| 存储组织 | 256M x 16 | 256M x 16 |
| 电源电压 | 1.35 V (1.28 V to 1.575 V) | — |
| Clock Frequency | 933 MHz | — |
| 数据速率 | 1866 Mbps/pin | — |
| 工作温度 | 0°C to +95°C | — |
| Operating Current | 14 mA | — |
| Standby Current | 2 mA, 3 mA | — |
| 封装 | FBGA-96 | 96-ball FBGA |
| 安装类型 | Surface Mount | — |
| RoHS | Compliant | Compliant |
| CAS 延迟 | [DATA_NEEDED: CAS Latency] | [DATA_NEEDED: CAS latency options] |
| Burst Length | [DATA_NEEDED: Burst Length] | 8 and 4 (with burst chop) |
| 引脚数 | 96 | — |
| Supply Voltage (VDD/VDDQ) | — | 1.35V + 0.100 / - 0.067V |
| Clock Input | — | Fully differential (CK, CK#) |
| Data Strobe | — | Differential (DQS, DQS#) |
| On-Chip DLL | — | Yes |
| DM Mask | — | Yes |
| 工作温度范围 | — | 0°C to 95°C (case) |
| Lead-Free | — | Yes |
| 无卤 | — | Yes |
| Speed Grade | — | [DATA_NEEDED: speed grade for -xxJ suffix] |
| On-Die Termination | — | Yes |
| Refresh | — | Auto-refresh and self-refresh |