K4RAH086VB-BCQK vs K4RAH165VB-BCWM 对比
详细并排对比 K4RAH086VB-BCQK 出自 Samsung Electronics 和 K4RAH165VB-BCWM 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4RAH086VB-BCQK | K4RAH165VB-BCWM |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $41.02 | $9.92 |
| 存储器类型 | DDR5 SDRAM | DDR5 SDRAM (volatile DRAM) |
| Density | 16 Gb | — |
| 存储组织 | 2G x 8 | — |
| 数据速率 | 4800 Mbps (DDR5-4800) | — |
| Clock Frequency | 2400 MHz | — |
| Supply Voltage (VDD) | 1.1 V | — |
| 接口 | Parallel | — |
| 封装 | FBGA-82 | FBGA-106 |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | 0C to 95C (commercial) | 0C to +85C |
| ECC | On-die ECC | — |
| Burst Length | BL32 (DDR5 standard) | — |
| Memory Format | DRAM (volatile) | — |
| DLL Mode | DLL Enabled (datasheet timing basis) | — |
| Product Status | Active | — |
| Packaging | Tray | Tray |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | Compliant |
| 存储容量 | — | 16 Gb |
| Memory Organization | — | 1G x 16 |
| Memory Interface | — | Parallel |
| 电源电压 | — | 1.1 V |
| Technology | — | DDR5 |
| Maximum Data Rate (DDR5 family) | — | up to 7200 Mbps |
| On-die ECC | — | Yes |
| Auto Self-Refresh | — | Yes |
| Asynchronous Reset | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Speed Grade (suffix BCWM) | — | [DATA_NEEDED: speed grade / CAS latency] |