K4RAH165VB-BCWM vs K4RAH086VB-BIWM 对比
详细并排对比 K4RAH165VB-BCWM 出自 Samsung Electronics 和 K4RAH086VB-BIWM 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4RAH165VB-BCWM | K4RAH086VB-BIWM |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $9.92 | $4.85 |
| 存储器类型 | DDR5 SDRAM (volatile DRAM) | DDR5 SDRAM |
| 存储容量 | 16 Gb | — |
| Memory Organization | 1G x 16 | — |
| Memory Interface | Parallel | — |
| 电源电压 | 1.1 V | [DATA_NEEDED: VDD voltage] |
| Technology | DDR5 | — |
| 封装 | FBGA-106 | — |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | 0C to +85C | [DATA_NEEDED: temperature range] |
| Maximum Data Rate (DDR5 family) | up to 7200 Mbps | — |
| On-die ECC | Yes | — |
| Auto Self-Refresh | Yes | — |
| Asynchronous Reset | Yes | Yes |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| RoHS 状态 | Compliant | [DATA_NEEDED: RoHS status] |
| Speed Grade (suffix BCWM) | [DATA_NEEDED: speed grade / CAS latency] | — |
| Packaging | Tray | — |
| Density | — | 16 Gb |
| 数据速率 | — | 5600 Mbps per pin |
| 存储组织 | — | [DATA_NEEDED: organization x4/x8] |
| Package Type | — | [DATA_NEEDED: package (FBGA, ball count)] |
| Bank Groups | — | [DATA_NEEDED: bank group count] |
| CAS Latency (CWL) | — | Programmable (per Samsung DDR5 16Gb B-die spec) |
| DLL | — | DLL Enabled mode operation |
| On-Die Termination | — | Yes (via Mode Register setting) |
| Internal Calibration | — | Yes (via MPC) |
| Posted CAS | — | Yes |
| Maximum Data Rate (family, per spec Rev1.0) | — | 4800 Mbps per pin (DDR5-4800, general applications) |