K6X0808C1D-GF70T00 vs K6X0808C1D-GF55T00 对比

详细并排对比 K6X0808C1D-GF70T00 出自 Samsung Electro-Mechanics 和 K6X0808C1D-GF55T00 出自 Samsung Electro-Mechanics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electro-Mechanics
K6X0808C1D-GF70T00 K6X0808C1D-GF70T00 - 256Kbit 32Kx8 Async SRAM 70ns | Samsung

K6X0808C1D-GF70T00 - 256Kbit 32Kx8 Async SRAM 70ns | Samsung

K6X0808C1D-GF70T00 ✓ 量产中
Samsung Electro-Mechanics
K6X0808C1D-GF55T00 K6X0808C1D-GF55T00 - 32Kx8 SRAM 55ns 28-SOP | Samsung

K6X0808C1D-GF55T00 - 32Kx8 SRAM 55ns 28-SOP | Samsung

K6X0808C1D-GF55T00 ✓ 量产中

规格对比

参数 K6X0808C1D-GF70T00 K6X0808C1D-GF55T00
品牌 Samsung Electro-Mechanics Samsung Electro-Mechanics
分类 DRAM Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.85 $1.05
存储器类型 SRAM - Asynchronous SRAM - Asynchronous
存储容量 256 Kbit 256 Kbit
存储组织 32K x 8 32K x 8
Access Time 70 ns 55 ns
接口 Parallel Parallel
Technology CMOS CMOS
电源电压 5 V [DATA_NEEDED: supply voltage range]
安装类型 Surface Mount Surface Mount
封装 28-SOP 28-SOP (450 mil)
工作温度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range for GF grade]
Standby Current [DATA_NEEDED: standby current] [DATA_NEEDED: standby current]
Active Current [DATA_NEEDED: active current] —
I/O Type Common Data I/O, TTL compatible —
Control Signals CE, OE, WE —
Clock / Refresh Fully static, no clock or refresh required —
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Packaging Tape & Reel (T00 suffix) —
Clock Frequency — N/A (asynchronous)
Operating Current — [DATA_NEEDED: operating current]
Data Retention — Low data retention voltage supported
Packaging Variant — Tape & Reel (T00 suffix)

数据手册与资源

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