K9CHGY8S5C-BCK0 vs K9EUGY8S0M-BCK0 对比

详细并排对比 K9CHGY8S5C-BCK0 出自 Samsung Electronics 和 K9EUGY8S0M-BCK0 出自 Samsung Electro-Mechanics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K9CHGY8S5C-BCK0 K9CHGY8S5C-BCK0 - Samsung NAND Flash Memory | Samsung Electronics

K9CHGY8S5C-BCK0 - Samsung NAND Flash Memory | Samsung Electronics

K9CHGY8S5C-BCK0 Unknown
Samsung Electro-Mechanics
K9EUGY8S0M-BCK0 K9EUGY8S0M-BCK0 - Samsung V-NAND Flash Memory | Samsung

K9EUGY8S0M-BCK0 - Samsung V-NAND Flash Memory | Samsung

K9EUGY8S0M-BCK0 ✓ 量产中

规格对比

参数 K9CHGY8S5C-BCK0 K9EUGY8S0M-BCK0
品牌 Samsung Electronics Samsung Electro-Mechanics
分类 Memory ICs Memory ICs
生命周期状态 Unknown 有效
库存状态 有库存 有库存
单价(USD) $0.00 $0.00
Manufacturer Samsung Electronics Samsung Electronics
Product Family K9-series NAND Flash K9-series V-NAND Flash
存储器类型 NAND Flash NAND Flash (non-volatile)
Density [DATA_NEEDED: total density] [DATA_NEEDED: memory density]
存储组织 [DATA_NEEDED: page/block organization] [DATA_NEEDED: organization x8/x16]
Bus Width [DATA_NEEDED: x8 or x16] —
电源电压 [DATA_NEEDED: VCC range] [DATA_NEEDED: VCC voltage]
接口类型 [DATA_NEEDED: asynchronous/toggle DDR] —
Read Cycle Time [DATA_NEEDED: tRC] —
Program Time [DATA_NEEDED: tPROG] —
Block Erase Time [DATA_NEEDED: tBERS] —
Endurance [DATA_NEEDED: program/erase cycles] [DATA_NEEDED: program/erase cycles]
Package Type [DATA_NEEDED: package code and dimensions] —
工作温度 [DATA_NEEDED: temperature range] [DATA_NEEDED: temperature range]
安装类型 Surface Mount Surface Mount
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Ordering Code Suffix -BCK0 —
Cell Type — [DATA_NEEDED: SLC/MLC/TLC/QLC]
VCCQ Voltage — [DATA_NEEDED: VCCQ voltage]
Page Size — [DATA_NEEDED: page size]
Block Size — [DATA_NEEDED: block size]
Access Time (tR) — [DATA_NEEDED: read access time]
Program Time (tPROG) — [DATA_NEEDED: program time]
Erase Time (tBERS) — [DATA_NEEDED: block erase time]
封装 — [DATA_NEEDED: package type and dimensions]
Packing — [DATA_NEEDED: tray or tape and reel]

数据手册与资源

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