K9CHGY8S5C-CCK0 vs K9EUGY8S0M-CCK0 对比
详细并排对比 K9CHGY8S5C-CCK0 出自 Samsung Electronics 和 K9EUGY8S0M-CCK0 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K9CHGY8S5C-CCK0 - Samsung NAND Flash Memory BGA-316 | Samsung
K9CHGY8S5C-CCK0 ✓ 量产中
规格对比
| 参数 | K9CHGY8S5C-CCK0 | K9EUGY8S0M-CCK0 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.00 | $0.00 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Type | NAND Flash Memory | 3D TLC V-NAND Flash Memory |
| 封装 | BGA-316 | — |
| 存储组织 | x8 (8-bit data access), quad CE configuration | — |
| Chip Enable Count | 16 (CE_n) | — |
| Pin Reduction | Not used | — |
| Supply Rail VCC | 1.83 V | — |
| Supply Rail (secondary) | 1.84 V | — |
| Supply Rail VCCQ-class | 2.96 V | — |
| Program/Erase Supply Rail | 12 V domain | — |
| Memory Technology | [DATA_NEEDED: cell type / V-NAND generation] | — |
| Density | [DATA_NEEDED: total density in Gb] | [DATA_NEEDED: total device density in Gb] |
| 接口类型 | [DATA_NEEDED: toggle DDR / ONFI, max data rate] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| 工作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| 安装类型 | Surface Mount (BGA reflow) | Surface Mount (BGA) |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance status] |
| Program/Erase Cycles | [DATA_NEEDED: P/E endurance] | — |
| Cell Type | — | TLC (3 bits per cell) |
| V-NAND Layers | — | [DATA_NEEDED: layer count] |
| 接口 | — | [DATA_NEEDED: interface type, e.g. Toggle DDR] |
| Supply Voltage VCC | — | [DATA_NEEDED: VCC core supply voltage] |
| Supply Voltage VCCQ | — | [DATA_NEEDED: VCCQ I/O supply voltage] |
| Block Size | — | [DATA_NEEDED: block size] |
| Package Type | — | [DATA_NEEDED: FBGA ball count and dimensions] |
| Grade Suffix | — | CCK0 (standard commercial grade) |