K9EUGY8S0M-BCK0 vs K9CHGY8S5C-BCK0 对比

详细并排对比 K9EUGY8S0M-BCK0 出自 Samsung Electro-Mechanics 和 K9CHGY8S5C-BCK0 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electro-Mechanics
K9EUGY8S0M-BCK0 K9EUGY8S0M-BCK0 - Samsung V-NAND Flash Memory | Samsung

K9EUGY8S0M-BCK0 - Samsung V-NAND Flash Memory | Samsung

K9EUGY8S0M-BCK0 ✓ 量产中
Samsung Electronics
K9CHGY8S5C-BCK0 K9CHGY8S5C-BCK0 - Samsung NAND Flash Memory | Samsung Electronics

K9CHGY8S5C-BCK0 - Samsung NAND Flash Memory | Samsung Electronics

K9CHGY8S5C-BCK0 Unknown

规格对比

参数 K9EUGY8S0M-BCK0 K9CHGY8S5C-BCK0
品牌 Samsung Electro-Mechanics Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 有效 Unknown
库存状态 有库存 有库存
单价(USD) $0.00 $0.00
Manufacturer Samsung Electronics Samsung Electronics
Product Family K9-series V-NAND Flash K9-series NAND Flash
存储器类型 NAND Flash (non-volatile) NAND Flash
Density [DATA_NEEDED: memory density] [DATA_NEEDED: total density]
存储组织 [DATA_NEEDED: organization x8/x16] [DATA_NEEDED: page/block organization]
Cell Type [DATA_NEEDED: SLC/MLC/TLC/QLC] —
电源电压 [DATA_NEEDED: VCC voltage] [DATA_NEEDED: VCC range]
VCCQ Voltage [DATA_NEEDED: VCCQ voltage] —
Page Size [DATA_NEEDED: page size] —
Block Size [DATA_NEEDED: block size] —
Access Time (tR) [DATA_NEEDED: read access time] —
Program Time (tPROG) [DATA_NEEDED: program time] —
Erase Time (tBERS) [DATA_NEEDED: block erase time] —
Endurance [DATA_NEEDED: program/erase cycles] [DATA_NEEDED: program/erase cycles]
封装 [DATA_NEEDED: package type and dimensions] —
工作温度 [DATA_NEEDED: temperature range] [DATA_NEEDED: temperature range]
安装类型 Surface Mount Surface Mount
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Packing [DATA_NEEDED: tray or tape and reel] —
Bus Width — [DATA_NEEDED: x8 or x16]
接口类型 — [DATA_NEEDED: asynchronous/toggle DDR]
Read Cycle Time — [DATA_NEEDED: tRC]
Program Time — [DATA_NEEDED: tPROG]
Block Erase Time — [DATA_NEEDED: tBERS]
Package Type — [DATA_NEEDED: package code and dimensions]
Ordering Code Suffix — -BCK0

数据手册与资源

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