K9F2808Q0B vs K9PDG08U5M 对比
详细并排对比 K9F2808Q0B 出自 Samsung Electronics 和 K9PDG08U5M 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K9F2808Q0B | K9PDG08U5M |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | EEPROM |
| 生命周期状态 | 停产 | 停产 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.00 | $4.20 |
| 存储器类型 | SLC NAND Flash (parallel) | NAND Flash (SLC) |
| Density | 128 Mbit | 4 Gbit |
| 存储组织 | 16M x 8 | x8 (multiplexed I/O) |
| Operating Voltage (VCC) | 1.7 V to 1.95 V | — |
| Read Access Speed | 50 ns | — |
| Cell Type | SLC (1 bit/cell) | — |
| 接口 | 8-bit multiplexed address/data | — |
| 封装 | 63-pin TBGA | TSOP1-48 |
| Temperature Grade | C (commercial), I (industrial) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Typical Read Current (Icc1) | [DATA_NEEDED: Icc1] | — |
| Program/Erase Endurance | [DATA_NEEDED: endurance cycles] | — |
| RoHS 状态 | unknown | [DATA_NEEDED: RoHS status] |
| Production Status | Mass production (per legacy datasheet); now EOL/obsolete | — |
| 电源电压 | — | [DATA_NEEDED: supply voltage range] |
| Page Read Time | — | [DATA_NEEDED: page read time] |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Block Erase Time | — | [DATA_NEEDED: block erase time] |
| Access Interface | — | Asynchronous multiplexed address/data, CLE/ALE control |
| Ready/Busy Output | — | Yes (R/B, open-drain) |
| Write Protect Pin | — | Yes (/WP) |
| 工作温度 | — | [DATA_NEEDED: operating temperature range] |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |