K9F2808UOC-PCB0 vs MT29F1G08ABAEAWP-IT:E 对比
详细并排对比 K9F2808UOC-PCB0 出自 Samsung Electronics 和 MT29F1G08ABAEAWP-IT:E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K9F2808UOC-PCB0 | MT29F1G08ABAEAWP-IT:E |
|---|---|---|
| 品牌 | Samsung Electronics | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 不推荐新设计 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.68 | $1.60 |
| 存储器类型 | NAND Flash (SLC, Small-Page) | — |
| Memory Density | 128 Mbit (16M x 8) | — |
| 存储组织 | 16M x 8 bit | 128M x 8 |
| Operating Voltage (VCC) | 2.7 V to 3.6 V | — |
| Read Access Time | 50 ns | — |
| Page Size | 528 bytes (512 main + 16 spare) | 2048 bytes + 64 bytes spare |
| Block Size | 16 pages (16 KiB + 256 spare bytes) | 128 KB |
| Package Options | 48-TSOP I, 48-WSOP1, 63-TBGA | — |
| I/O Bus Width | x8 | — |
| 工作温度 | Commercial / Industrial (C, I grade) | -40C to +85C |
| Command Set | Standard NAND (00h/01h/10h/30h/60h/D0h/50h) | — |
| Status Output | R/B# open-drain ready/busy | — |
| Technology Node | Samsung 2nd-generation SLC NAND | — |
| Cell Type | Single-Level Cell (SLC) | — |
| Programming Model | Page program, block erase | — |
| Lead-Free / RoHS | [DATA_NEEDED: RoHS status from Samsung datasheet] | — |
| 存储容量 | — | 1 Gbit (128 MB) |
| 接口 | — | Parallel |
| 电源电压 | — | 3.3 V |
| Access Time | — | 25 ns |
| Program Time | — | 200 us (typical) |
| Erase Time | — | 2 ms (typical) |
| Endurance | — | 100K program/erase cycles |
| Data Retention | — | 10 years |
| 封装 | — | TSOP-48 |
| 安装类型 | — | Surface Mount |
| RoHS 状态 | — | Compliant |