K9F6408U0B vs K9F6408Q0C 对比

详细并排对比 K9F6408U0B 出自 Samsung Electronics 和 K9F6408Q0C 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K9F6408U0B K9F6408U0B - 64Mbit 8M x8 NAND Flash 44-TSOP2 | Samsung

K9F6408U0B - 64Mbit 8M x8 NAND Flash 44-TSOP2 | Samsung

K9F6408U0B Obsolete
Samsung Electronics
K9F6408Q0C K9F6408Q0C - 64Mb 8M x8 NAND Flash 1.8V | Samsung Electronics

K9F6408Q0C - 64Mb 8M x8 NAND Flash 1.8V | Samsung Electronics

K9F6408Q0C Obsolete

规格对比

参数 K9F6408U0B K9F6408Q0C
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 Obsolete Obsolete
库存状态 有库存 有库存
单价(USD) $3.20 $1.31
Memory Organization 8M x 8 bit (64Mbit) —
存储器类型 NAND Flash NAND Flash (SLC)
Operating Voltage (VCC) 2.7 V to 3.6 V 1.65 V to 1.95 V
Access Time / Cycle Time 50 ns —
封装 44-TSOP2 —
Page Size 528 bytes (512 data + 16 spare) 528 bytes (512 data + 16 spare)
Block Size [DATA_NEEDED: block organization from datasheet] —
Program/Erase Endurance 100K program/erase cycles —
接口 8-bit multiplexed command/address/data I/O Parallel, 8-bit multiplexed I/O
Write Protect Yes (WP pin) —
Ready/Busy Output Yes (R/B open-drain) —
Operating Temperature (TCB0 grade) 0C to 70C —
Operating Temperature (TIB0 grade) -40C to 85C —
安装类型 Surface Mount Surface Mount
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Production Status (per datasheet) Mass Production (legacy; now obsolete) —
Memory Capacity — 64 Mbit (8 M x 8 bit main + 256 K x 8 bit spare)
存储组织 — 8M x 8
Access Time — 10 us (read cycle, family listing)
Temperature Grade — C (commercial), i (industrial)
Package (HIB0 variant) — 48-ball TBGA
Package (family TBGA note) — 9 mm x 11 mm 63-ball changed to 6 mm x 8.5 mm 48-ball
Spare Area — 256K x 8 bit
Control Signals — CLE, ALE, CE, WE, RE, WP, R/B
Bad Block Management — Host-managed (marking in spare area)
Endurance — [DATA_NEEDED: program/erase cycles]
工作温度 — [DATA_NEEDED: operating temperature range]
MSL 等级 — [DATA_NEEDED: moisture sensitivity level]

数据手册与资源

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