K9FGGY8J5A-BCK0 vs K9IUGY8J7B-CCK0 对比

详细并排对比 K9FGGY8J5A-BCK0 出自 Samsung Electronics 和 K9IUGY8J7B-CCK0 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K9FGGY8J5A-BCK0 K9FGGY8J5A-BCK0 - Samsung V-NAND Flash Memory | Samsung Electronics

K9FGGY8J5A-BCK0 - Samsung V-NAND Flash Memory | Samsung Electronics

K9FGGY8J5A-BCK0 ✓ 量产中
Samsung Electronics
K9IUGY8J7B-CCK0 K9IUGY8J7B-CCK0 - 1Tb 3D V-NAND TLC Flash | Samsung

K9IUGY8J7B-CCK0 - 1Tb 3D V-NAND TLC Flash | Samsung

K9IUGY8J7B-CCK0 ✓ 量产中

规格对比

参数 K9FGGY8J5A-BCK0 K9IUGY8J7B-CCK0
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs EEPROM
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $1.00
Manufacturer Samsung Electronics Samsung Electronics
Product Family K9 Series NAND Flash —
Technology 3D V-NAND —
存储器类型 NAND Flash (non-volatile) NAND Flash, 3D V-NAND TLC
Density [DATA_NEEDED: density] —
存储组织 [DATA_NEEDED: organization] —
Cell Type [DATA_NEEDED: cell type TLC/MLC] TLC (3 bits per cell)
Supply Voltage VCC [DATA_NEEDED: supply voltage] —
VCCQ Voltage [DATA_NEEDED: VCCQ] —
接口 [DATA_NEEDED: interface type/toggle mode] —
Page Size [DATA_NEEDED: page size] [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: block size] [DATA_NEEDED: block size]
封装 [DATA_NEEDED: package and ball count] —
工作温度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
安装类型 Surface Mount Surface Mount (BGA)
Speed Grade Suffix BCK0 —
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
MSL 等级 [DATA_NEEDED: MSL level] —
Memory Density — 1 Tb (Tera bit)
V-NAND Generation — V6 (6th generation)
Process Node / Layer Count — 4448-128L (128-layer)
接口类型 — [DATA_NEEDED: bus interface type]
Supply Voltage (VCC) — [DATA_NEEDED: VCC voltage]
Supply Voltage (VCCQ) — [DATA_NEEDED: VCCQ voltage]
数据总线宽度 — [DATA_NEEDED: data bus width]
Program/Erase Cycles — [DATA_NEEDED: P/E cycle endurance]
Package Type — [DATA_NEEDED: exact package code]

数据手册与资源

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