K9HCG08U1M vs K9XXG08U0M 对比
详细并排对比 K9HCG08U1M 出自 Samsung Electronics 和 K9XXG08U0M 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K9HCG08U1M | K9XXG08U0M |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | Obsolete |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.00 | $5.60 |
| Memory Technology | MLC NAND Flash | — |
| Total Capacity | 64 Gbit | — |
| 存储组织 | 8G x 8 | 1G x 8 bit |
| 数据总线宽度 | 8 bit | — |
| 接口类型 | Asynchronous NAND (multiplexed address/data/command) | — |
| 电源电压 | [DATA_NEEDED: supply voltage] | 2.7 V to 3.6 V (3.3V device) |
| Page Size | [DATA_NEEDED: page size] | — |
| Block Size | [DATA_NEEDED: block size] | — |
| Read Time (tR) | [DATA_NEEDED: read time] | — |
| Program Time (tPROG) | [DATA_NEEDED: program time] | — |
| Program/Erase Cycles | [DATA_NEEDED: endurance] | — |
| 封装 | TSOP-48 (PDSO48) | 48-pin TSOP-I |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -40C to +105C (TA) | [DATA_NEEDED: operating temperature range] |
| Ready/Busy Output | Yes (R/B#) | — |
| Die Technology | Samsung E-die (per datasheet family) | — |
| Full Ordering Code | K9HCG08U1M-PCB0 / K9HCG08U1M-PCB0T00 | — |
| 存储器类型 | — | NAND Flash |
| Density | — | 8 G-bit |
| Spare Area | — | 256 M-bit (per K9K8G08U0M) |
| 接口 | — | 8-bit parallel NAND (command/address/data multiplexed) |
| Page Read Time | — | 20 us |
| Access Interface Standard | — | Samsung legacy NAND command set |
| Bad Block Management | — | Factory bad block marking (host-managed ECC required) |
| Cell Type | — | SLC (K9K8G08U0M) / MLC (K9G8G08U0M variants) |
| ECC Requirement | — | External ECC by host controller |
| RoHS 状态 | — | [DATA_NEEDED: RoHS status] |
| MSL 等级 | — | [DATA_NEEDED: moisture sensitivity level] |