K9HQGY8S5M vs K9DVGY8J5M 对比

详细并排对比 K9HQGY8S5M 出自 Samsung Electronics 和 K9DVGY8J5M 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K9HQGY8S5M K9HQGY8S5M - 3D V-NAND Flash, FBGA-316 | Samsung | SSD Storage

K9HQGY8S5M - 3D V-NAND Flash, FBGA-316 | Samsung | SSD Storage

K9HQGY8S5M ✓ 量产中
Samsung Electronics
K9DVGY8J5M K9DVGY8J5M - Samsung V-NAND TLC Flash Memory Chip | Samsung

K9DVGY8J5M - Samsung V-NAND TLC Flash Memory Chip | Samsung

K9DVGY8J5M ✓ 量产中

规格对比

参数 K9HQGY8S5M K9DVGY8J5M
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $1.00
Manufacturer Samsung Electronics Samsung Electronics
Product Type 3D V-NAND Flash Memory (stacked, client NAND) Raw NAND Flash Memory
Package Type 316-ball Fine Pitch BGA (FBGA-316) [DATA_NEEDED: package type and dimensions]
Die Configuration 4 x K9ADGD8S0A V-NAND dies (per TechInsights package analysis) —
NAND Technology 32-layer pMLC 3D V-NAND (per Samsung 850 Pro 256 GB analysis) Samsung V-NAND (3D TLC)
Memory Class Non-volatile NAND flash —
接口 NAND (ONFI/Toggle-style asynchronous interface) - exact timing mode [DATA_NEEDED: interface timing mode] —
Density [DATA_NEEDED: total bit density] [DATA_NEEDED: die density (Gb)]
电源电压 [DATA_NEEDED: VCC range] —
Page Size [DATA_NEEDED: page size] —
Block Size [DATA_NEEDED: block size] —
Program/Erase Cycles [DATA_NEEDED: P/E endurance rating] —
安装类型 Surface Mount (BGA) Surface Mount
工作温度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
MSL 等级 [DATA_NEEDED: moisture sensitivity level] —
Original Application Samsung SSD 850 Pro solid-state drive —
Flash ID — EC519A3F8CCB
Organization (Page/Block) — [DATA_NEEDED: page and block organization]
接口类型 — [DATA_NEEDED: interface (toggle DDR / async)]
Supply Voltage (VCC) — [DATA_NEEDED: VCC voltage]
Supply Voltage (VCCQ) — [DATA_NEEDED: VCCQ voltage]
Program Page Time (tPROG) — [DATA_NEEDED: tPROG typical/us]
Block Erase Time (tBERS) — [DATA_NEEDED: tBERS typical/us]
Read Time (tR) — [DATA_NEEDED: tR typical/us]
Program/Erase Endurance — [DATA_NEEDED: P/E cycle endurance]

数据手册与资源

浏览全部产品 创建 BOM 获取报价