K9HUGY8J5B-BCK0 vs K9FGGY8J5A-BCK0 对比

详细并排对比 K9HUGY8J5B-BCK0 出自 Samsung Electronics 和 K9FGGY8J5A-BCK0 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K9HUGY8J5B-BCK0 K9HUGY8J5B-BCK0 - Samsung V-NAND Flash Memory | Samsung

K9HUGY8J5B-BCK0 - Samsung V-NAND Flash Memory | Samsung

K9HUGY8J5B-BCK0 ✓ 量产中
Samsung Electronics
K9FGGY8J5A-BCK0 K9FGGY8J5A-BCK0 - Samsung V-NAND Flash Memory | Samsung Electronics

K9FGGY8J5A-BCK0 - Samsung V-NAND Flash Memory | Samsung Electronics

K9FGGY8J5A-BCK0 ✓ 量产中

规格对比

参数 K9HUGY8J5B-BCK0 K9FGGY8J5A-BCK0
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $0.00
Manufacturer Samsung Electronics Samsung Electronics
Product Family K9HUG (V-NAND flash) K9 Series NAND Flash
存储器类型 NAND Flash (3D V-NAND) NAND Flash (non-volatile)
Density [DATA_NEEDED: device density] [DATA_NEEDED: density]
Cell Type [DATA_NEEDED: SLC/MLC/TLC/QLC] [DATA_NEEDED: cell type TLC/MLC]
存储组织 [DATA_NEEDED: page/block organization] [DATA_NEEDED: organization]
Bus Width [DATA_NEEDED: x8 or x16] —
Supply Voltage (VCC) [DATA_NEEDED: VCC range] —
Supply Voltage (VCCQ) [DATA_NEEDED: VCCQ range] —
接口 [DATA_NEEDED: asynchronous/toggle DDR] [DATA_NEEDED: interface type/toggle mode]
Page Program Time [DATA_NEEDED: tPROG] —
Page Read Time [DATA_NEEDED: tR] —
Block Erase Time [DATA_NEEDED: tBERS] —
Endurance [DATA_NEEDED: P/E cycles] —
封装 [DATA_NEEDED: package code, e.g. FBGA] [DATA_NEEDED: package and ball count]
工作温度 [DATA_NEEDED: temperature range] [DATA_NEEDED: operating temperature range]
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant [DATA_NEEDED: RoHS status]
Technology — 3D V-NAND
Supply Voltage VCC — [DATA_NEEDED: supply voltage]
VCCQ Voltage — [DATA_NEEDED: VCCQ]
Page Size — [DATA_NEEDED: page size]
Block Size — [DATA_NEEDED: block size]
Speed Grade Suffix — BCK0
MSL 等级 — [DATA_NEEDED: MSL level]

数据手册与资源

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