K9NUGY8R6B-CCQ0 vs K9IUGY8J7B-CCK0 对比
详细并排对比 K9NUGY8R6B-CCQ0 出自 Samsung Electronics 和 K9IUGY8J7B-CCK0 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K9NUGY8R6B-CCQ0 - 1Tb TLC V-NAND Flash | Samsung | SSD Storage
K9NUGY8R6B-CCQ0 ✓ 量产中
规格对比
| 参数 | K9NUGY8R6B-CCQ0 | K9IUGY8J7B-CCK0 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | EEPROM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.00 | $1.00 |
| 存储器类型 | NAND Flash (V-NAND, 3D TLC) | NAND Flash, 3D V-NAND TLC |
| Density | 1 Tb | — |
| Cell Type | Triple-Level Cell (TLC) | TLC (3 bits per cell) |
| 封装 | 176-ball FBGA (176L) | — |
| 安装类型 | Surface Mount (BGA) | Surface Mount (BGA) |
| 电源电压 | [DATA_NEEDED: VCC range] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Program/Erase Cycles | [DATA_NEEDED: P/E endurance] | [DATA_NEEDED: P/E cycle endurance] |
| Data Retention | [DATA_NEEDED: retention] | — |
| Read Latency | [DATA_NEEDED: tR] | — |
| 接口 | Asynchronous / Toggle-mode NAND (per Samsung V-NAND protocol) | — |
| ECC Requirement | External controller LDPC ECC required | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| RoHS 状态 | [DATA_NEEDED: RoHS compliance] | [DATA_NEEDED: RoHS status] |
| Application Class | Consumer / Client / Enterprise SSD raw NAND | — |
| Memory Density | — | 1 Tb (Tera bit) |
| V-NAND Generation | — | V6 (6th generation) |
| Process Node / Layer Count | — | 4448-128L (128-layer) |
| Manufacturer | — | Samsung Electronics |
| 接口类型 | — | [DATA_NEEDED: bus interface type] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC voltage] |
| Supply Voltage (VCCQ) | — | [DATA_NEEDED: VCCQ voltage] |
| 数据总线宽度 | — | [DATA_NEEDED: data bus width] |
| Package Type | — | [DATA_NEEDED: exact package code] |