K9PKGY8S7M-CCK0 vs K9DVGY8J5M 对比
详细并排对比 K9PKGY8S7M-CCK0 出自 Samsung Electronics 和 K9DVGY8J5M 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K9PKGY8S7M-CCK0 | K9DVGY8J5M |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $9.40 | $1.00 |
| Memory Capacity | 128 Gb (16 GB) | — |
| 存储器类型 | NAND Flash | — |
| Cell Architecture | 3D V-NAND, MLC (2 bits/cell) | — |
| V-NAND Layers | 24 layers | — |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| 封装 | BGA | — |
| 安装类型 | Surface Mount | Surface Mount |
| 接口 | Asynchronous/toggle-mode NAND bus (per Samsung V-NAND family) | — |
| 电源电压 | [DATA_NEEDED: supply voltage] | — |
| Page Size | [DATA_NEEDED: page size] | — |
| Block Size | [DATA_NEEDED: block size] | — |
| Program/Erase Cycles | [DATA_NEEDED: P/E cycle endurance] | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| RoHS 状态 | Lead free / RoHS compliant | [DATA_NEEDED: RoHS status] |
| Application Domain | Enterprise SSD (e.g., Samsung 845DC Pro) | — |
| Access Time (tR) | [DATA_NEEDED: read cycle time] | — |
| Data Retention | [DATA_NEEDED: retention specification] | — |
| Product Type | — | Raw NAND Flash Memory |
| NAND Technology | — | Samsung V-NAND (3D TLC) |
| Flash ID | — | EC519A3F8CCB |
| Density | — | [DATA_NEEDED: die density (Gb)] |
| Organization (Page/Block) | — | [DATA_NEEDED: page and block organization] |
| 接口类型 | — | [DATA_NEEDED: interface (toggle DDR / async)] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC voltage] |
| Supply Voltage (VCCQ) | — | [DATA_NEEDED: VCCQ voltage] |
| Program Page Time (tPROG) | — | [DATA_NEEDED: tPROG typical/us] |
| Block Erase Time (tBERS) | — | [DATA_NEEDED: tBERS typical/us] |
| Read Time (tR) | — | [DATA_NEEDED: tR typical/us] |
| Program/Erase Endurance | — | [DATA_NEEDED: P/E cycle endurance] |
| Package Type | — | [DATA_NEEDED: package type and dimensions] |