K9QDGB8U7M vs K9PDG08U5M 对比

详细并排对比 K9QDGB8U7M 出自 Samsung Electronics 和 K9PDG08U5M 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K9QDGB8U7M K9QDGB8U7M - Samsung NAND Flash Memory | Samsung Electronics

K9QDGB8U7M - Samsung NAND Flash Memory | Samsung Electronics

K9QDGB8U7M Unknown
Samsung Electronics
K9PDG08U5M K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics

K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics

K9PDG08U5M ✗ 停产

规格对比

参数 K9QDGB8U7M K9PDG08U5M
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs EEPROM
生命周期状态 Unknown 停产
库存状态 有库存 有库存
单价(USD) $0.00 $4.20
Manufacturer Samsung Electronics —
Product Family K9 NAND Flash —
存储器类型 NAND Flash NAND Flash (SLC)
Density [DATA_NEEDED: Density] 4 Gbit
存储组织 [DATA_NEEDED: Organization] x8 (multiplexed I/O)
接口类型 [DATA_NEEDED: Interface Type] —
电源电压 [DATA_NEEDED: Supply Voltage] [DATA_NEEDED: supply voltage range]
Page Size [DATA_NEEDED: Page Size] [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: Block Size] [DATA_NEEDED: block size]
Program/Erase Endurance [DATA_NEEDED: Program/Erase Endurance] —
Read Latency [DATA_NEEDED: Read Latency] —
Package Type BGA (surface mount) —
工作温度 [DATA_NEEDED: Operating Temperature] [DATA_NEEDED: operating temperature range]
安装类型 Surface Mount Surface Mount
RoHS 状态 [DATA_NEEDED: RoHS Status] [DATA_NEEDED: RoHS status]
封装 — TSOP1-48
Page Read Time — [DATA_NEEDED: page read time]
Page Program Time — [DATA_NEEDED: page program time]
Block Erase Time — [DATA_NEEDED: block erase time]
Access Interface — Asynchronous multiplexed address/data, CLE/ALE control
Ready/Busy Output — Yes (R/B, open-drain)
Write Protect Pin — Yes (/WP)
Endurance — [DATA_NEEDED: program/erase cycles]

数据手册与资源

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